Zobrazeno 1 - 1
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pro vyhledávání: '"Recessed 16 ohmic contacts"'
Autor:
Oguz Odabasi, Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Yakup Unal, Gurur Salkim, Gunes Basar, Bayram Butun, Ekmel Ozbay
Publikováno v:
IEEE Electron Device Letters
In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01abf7e6547abebe19af82a6d3b43273
https://doi.org/10.1109/led.2022.3199569
https://doi.org/10.1109/led.2022.3199569
