Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Recep Onur Yildiz"'
Autor:
Recep Onur Yildiz, Ayse Yilmazer-Metin
Publikováno v:
2022 IEEE 15th Dallas Circuit And System Conference (DCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f962533c450a27292216b35032806a
https://doi.org/10.1109/dcas53974.2022.9845527
https://doi.org/10.1109/dcas53974.2022.9845527
Autor:
Recep Onur Yildiz, Ayse Yilmazer-Metin
Publikováno v:
2021 29th Telecommunications Forum (TELFOR).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9945f56d6ce0474e4d93f3533866ac7
https://doi.org/10.1109/telfor52709.2021.9653439
https://doi.org/10.1109/telfor52709.2021.9653439
Autor:
Recep Onur Yildiz, Ayse Yilmazer-Metin
Publikováno v:
2021 29th Telecommunications Forum (TELFOR).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f359a0b6a20278fcba8012c665f4791f
https://doi.org/10.1109/telfor52709.2021.9653381
https://doi.org/10.1109/telfor52709.2021.9653381
Publikováno v:
2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020).
Depletion mode transistors, such as GaN HEMTs, are widely used in high-power RF applications. High-power RF amplifiers using GaN HEMTs are biased with large drain-source voltage, and a high current flows during its operation. Proper control of large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263fa283826c64f324ee6b4adf0f90a4
https://doi.org/10.1109/lamc50424.2021.9601558
https://doi.org/10.1109/lamc50424.2021.9601558