Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Reboud Vincent"'
Autor:
Bieganski Adam, Perestjuk Marko, Armand Remi, Della Torre Alberto, Reboud Vincent, Hartmann Jean-Michel, Tortai Jean-Herve, Nguyen Thach, Mitchell Arnan, Monat Christelle, Cueff Sebastien, Grillet Christian
Publikováno v:
EPJ Web of Conferences, Vol 287, p 01013 (2023)
We study the antimony trisulfide’s (Sb2S3) linear optical properties for potential applications in reconfigurable chip-based supercontinuum mid-IR sources. We experimentally demonstrate that Sb2S3 cladding on SiGe-on-Si waveguides induces relativel
Externí odkaz:
https://doaj.org/article/f8c735aa81834b4298599dab271c10f2
Autor:
Pilon, Francesco Armand, Niquet, Yann-Michel, Chretien, Jeremie, Pauc, Nicolas, Reboud, Vincent, Calvo, Vincent, Widiez, Julie, Hartmann, Jean Michel, Chelnokov, Alexei, Faist, Jerome, Sigg, Hans
Publikováno v:
Physical Review Research 4, 033050 (2022)
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integrati
Externí odkaz:
http://arxiv.org/abs/2201.11856
Autor:
Elbaz, Anas, Arefin, Riazul, Sakat, Emilie, Wang, Binbin, Herth, Etienne, Patriarche, Gilles, Foti, Antonino, Ossikovski, Razvigor, Sauvage, Sebastien, Checoury, Xavier, Pantzas, Konstantinos, Sagnes, Isabelle, Chrétien, Jérémie, Casiez, Lara, Bertrand, Mathieu, Calvo, Vincent, Pauc, Nicolas, Chelnokov, Alexei, Boucaud, Philippe, Boeuf, Frederic, Reboud, Vincent, Hartmann, Jean-Michel, Kurdi, Moustafa El
Publikováno v:
ACS Photonics 2020, 7, 10, 2713-2722
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru
Externí odkaz:
http://arxiv.org/abs/2012.11262
Akademický článek
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Autor:
Coudurier, Nicolas, Quintero, Andrea, Loup, Virginie, Gergaud, Patrice, Hartmann, Jean-Michel, Mariolle, Denis, Reboud, Vincent, Rodriguez, Philippe
Publikováno v:
In Microelectronic Engineering 15 March 2022 257
Autor:
Gassenq, Alban, Guilloy, Kevin, Pauc, Nicolas, Rouchon, Denis, Widiez, Julie, Rothman, Johan, Hartmann, Jean-Michel, Chelnokov, Alexei, Reboud, Vincent, Calvo, Vincent
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In th
Externí odkaz:
http://arxiv.org/abs/1705.06832
Autor:
Quintero, Andrea, Gergaud, Patrice, Hartmann, Jean-Michel, Reboud, Vincent, Cassan, Eric, Rodriguez, Philippe
Publikováno v:
In Microelectronic Engineering 15 January 2022 252
Akademický článek
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Autor:
Tardif, Samuel, Gassenq, Alban, Guilloy, Kevin, Pauc, Nicolas, Dias, Guilherme Osvaldo, Hartmann, Jean-Michel, Widiez, Julie, Zabel, Thomas, Marin, Esteban, Sigg, Hans, Faist, Jérôme, Chelnokov, Alexei, Reboud, Vincent, Calvo, Vincent, Micha, Jean-Sébastien, Robach, Odile, Rieutord, François
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numer
Externí odkaz:
http://arxiv.org/abs/1603.06370
Autor:
Finazzi, Lorenzo, Giani, Raffaele, Concepcion, Omar, Buca, Dan, Reboud, Vincent, Isella, Giovanni, Tosi, Alberto
Publikováno v:
IEEE Journal on Selected Topics in Quantum Electronics; January 2025, Vol. 31 Issue: 1 p1-9, 9p