Zobrazeno 1 - 10
of 388
pro vyhledávání: '"Reboud V."'
Autor:
Casiez, L., Cardoux, C., Acosta Alba, P., Bernier, N., Richy, J., Pauc, N., Calvo, V., Coudurier, N., Rodriguez, P., Concepción, O., Buca, D., Frauenrath, M., Hartmann, J.M., Chelnokov, A., Reboud, V.
Publikováno v:
In Materials Science in Semiconductor Processing 1 November 2024 182
Autor:
Reboud, V., Concepción, O., Du, W., El Kurdi, M., Hartmann, J.M., Ikonic, Z., Assali, S., Pauc, N., Calvo, V., Cardoux, C., Kroemer, E., Coudurier, N., Rodriguez, P., Yu, S.-Q., Buca, D., Chelnokov, A.
Publikováno v:
In Photonics and Nanostructures - Fundamentals and Applications February 2024 58
Autor:
Reboud, V., Buca, D., Sigg, H., Hartmann, J. M., Ikonic, Z., Pauc, N., Calvo, V., Rodriguez, P., Chelnokov, A.
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical si
Externí odkaz:
http://arxiv.org/abs/2012.10220
Autor:
Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Milord, L., Thai, Q. M., Bertrand, M., Guilloy, K., Rouchon, D., Rothman, J., Zabel, T., Pilon, F. Armand, Sigg, H., Chelnokov, A., Hartmann, J. M., Calvo, V.
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um
Externí odkaz:
http://arxiv.org/abs/1704.06436
Autor:
Gassenq, A., Milord, L., Aubin, J., Pauc, N., Guilloy, K., Rothman, J., Rouchon, D., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measu
Externí odkaz:
http://arxiv.org/abs/1701.03788
Autor:
Bouschet, M., Martinez, E., Fabbri, J.M., Casiez, L., Quintero, A., Da Fonseca, J., Jany, C., Rodriguez, P., Chelnokov, A., Hartmann, J.M., Reboud, V., Renault, O.
Publikováno v:
In Microelectronic Engineering 15 January 2022 253
Autor:
Guilloy, K., Pauc, N., Gassenq, A., Niquet, Y. M., Escalante, J. M., Duchemin, I., Tardif, S., Dias, G. Osvaldo, Rouchon, D., Widiez, J., Hartmann, J. M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. Howe
Externí odkaz:
http://arxiv.org/abs/1606.01668
Autor:
Gassenq, A., Tardif, S., Guilloy, K., Dias, G. Osvaldo, Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J-M., Widiez, J., Escalante, J., Niquet, Y-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.
Publikováno v:
Appl. Phys. Lett. 108, 241902 (2016)
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical li
Externí odkaz:
http://arxiv.org/abs/1604.04391
Autor:
Segura-Ruiz, Jaime, Pauc, N., Chrétien, J., Casiez, L., Hartmann, J.M., Chelnokov, A., Calvo, V., Reboud, V., Tardif, S., Tucoulou, R., Villanova, J.
Publikováno v:
In Materials Science & Engineering B February 2021 264
Autor:
Geiger, R., Zabel, T., Marin, E., Gassenq, A., Hartmann, J. -M., Widiez, J., Escalante, J., Guilloy, K., Pauc, N., Rouchon, D., Diaz, G. Osvaldo, Tardif, S., Rieutord, F., Duchemin, I., Niquet, Y. -M., Reboud, V., Calvo, V., Chelnokov, A., Faist, J., Sigg, H.
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain.
Externí odkaz:
http://arxiv.org/abs/1603.03454