Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Rebecca L. Peterson"'
Autor:
Ming-Hsun Lee, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson
Publikováno v:
APL Materials, Vol 10, Iss 9, Pp 091105-091105-8 (2022)
Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for
Externí odkaz:
https://doaj.org/article/1495aa2bd6aa4f23ab5166021e76bfaf
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022201-022201-1 (2019)
Externí odkaz:
https://doaj.org/article/f5bd6266f73b4dfb90f2e541732abf67
Autor:
Ming-Hsun Lee, Rebecca L. Peterson
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022524-022524-8 (2019)
Here we investigated interfacial reactions and interdiffusion of titanium/gold ohmic contacts with a tin-doped single-crystal β-Ga2O3 (010) substrate. After annealing at 470 °C for 1 min in N2 to form an ohmic contact, we studied the interface via
Externí odkaz:
https://doaj.org/article/09d74b20082e4cd1a7ec7067b3d767d4
Autor:
Julia D. Lenef, Andrew J. Gayle, Jaesung Jo, Kalyn M. Fuelling, Srinivas K. Yadavalli, Alondra M. Ortiz-Ortiz, Kai Sun, Rebecca L. Peterson, Neil P. Dasgupta
Publikováno v:
Chemistry of Materials. 35:2503-2517
Autor:
Tonglin L. Newsom, Christopher R. Allemang, Tae H. Cho, Neil P. Dasgupta, Rebecca L. Peterson
Publikováno v:
IEEE Electron Device Letters. 44:72-75
Publikováno v:
IEEE Transactions on Electron Devices. 69:6776-6782
Autor:
Ming-Hsun Lee, Ta-Shun Chou, S. Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson
Publikováno v:
ACS Nano. 16:11988-11997
Publikováno v:
IEEE Transactions on Electron Devices. 69:2436-2442
Autor:
Rebecca L. Peterson, Ming-Hsun Lee
Publikováno v:
Journal of Materials Research. 36:4771-4789
β-Ga2O3 is a promising material for next-generation power devices because of its ultra-wide bandgap, the commercial availability of bulk substrates, epitaxial growth, and ease of n-type doping. To fully exploit its potential, it is critical to estab
Autor:
Rebecca L. Peterson, Jaesung Jo, Neil P. Dasgupta, Orlando Trejo, David J. Mandia, Julia D. Lenef
Publikováno v:
The Journal of Physical Chemistry C. 125:9383-9390
Metal oxide semiconductors are important due to their diverse set of applications in (opto)electronics including light-emitting diodes, solar cells, and thin film transistors (TFTs). However, compa...