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Autor:
Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Rebane, Yuri, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri
Publikováno v:
Japanese Journal of Applied Physics 52 (2013) 08JE14
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 cm$^{-2}$ to 100 cm$^{-2}$ were found on the surfaces of the films. Origins of pit formation
Externí odkaz:
http://arxiv.org/abs/1902.06465
