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pro vyhledávání: '"Rca-1 Treatment"'
Autor:
S.S. Major, Pavan K. Narayanam, V. Divakar Botcha, Singh Gulbagh, S.S. Talwar, Raman S. Srinivasa
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 452:65-72
Graphene oxide (GO) sheets were transferred by Langmuir-Blodgett technique on Si and SiO2/Si substrates. The surface pressure - area isotherms of 'amphiphilic' GO sheets at the air-water interface are found to be highly sensitive to subphase pH, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::157cd39014c5468ffa20a7cea4b83a71
https://doi.org/10.1016/j.colsurfa.2014.03.077
https://doi.org/10.1016/j.colsurfa.2014.03.077
Akademický článek
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Autor:
Bland, Henry A., Thomas, Evan L. H., Klemencic, Georgina M., Mandal, Soumen, Papageorgiou, Andreas, Jones, Tyrone G., Williams, Oliver A.
Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth
Externí odkaz:
http://arxiv.org/abs/1810.10282
Autor:
Bland, Henry A.1 (AUTHOR) Blandha@cardiff.ac.uk, Thomas, Evan L. H.1 (AUTHOR), Klemencic, Georgina M.1 (AUTHOR), Mandal, Soumen1 (AUTHOR), Morgan, David J.2 (AUTHOR), Papageorgiou, Andreas1 (AUTHOR), Jones, Tyrone G.3 (AUTHOR), Williams, Oliver A.1 (AUTHOR)
Publikováno v:
Scientific Reports. 2/27/2019, Vol. 9 Issue 1, p1-11. 11p.
Autor:
Botcha, V. Divakar, Singh, Gulbagh, Narayanam, Pavan K., Sutar, D. S., Talwar, S. S., Srinivasa, R. S., Major, S. S.
Publikováno v:
AIP Conference Proceedings; Feb2013, Vol. 1512 Issue 1, p708-709, 2p, 2 Color Photographs, 1 Graph
Autor:
Pasquariello, D., Hjort, K.
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics; Jan/Feb2002, Vol. 8 Issue 1, p118-131, 14p
Publikováno v:
Scientific Reports.
Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bbb1b6c85f270c223b915bada8b67b1