Tailoring amorphous boron nitride for high-performance two-dimensional electronics.

Autor: Chen CY; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Sun Z; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Torsi R; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Wang K; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA., Kachian J; Intel Corporation, 2200 Mission College Blvd, Santa Clara, CA, 95054, USA., Liu B; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA., Rayner GB Jr; The Kurt J. Lesker Company, 1925 PA-51, Jefferson Hills, PA, 15025, USA., Chen Z; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Appenzeller J; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Lin YC; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City, 300, Taiwan. ycl194@nycu.edu.tw., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.; Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.

Publikováno v: Nature communications [Nat Commun] 2024 May 13; Vol. 15 (1), pp. 4016. Date of Electronic Publication: 2024 May 13.