Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Raymond S. Pengelly"'
Publikováno v:
IEEE Microwave Magazine. 17:41-58
William H. Doherty was an American electrical engineer, best known for his invention of the Doherty amplifier. Born in Cambridge, Massachusetts, in 1907, Doherty attended Harvard University, where he received his bachelor's degree in communication en
Publikováno v:
IEEE Microwave Magazine. 15:134-147
Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greate
Publikováno v:
IEEE Microwave Magazine. 13:125-131
In this article, a high-efficiency saturated amplifier has been presented. This amplifier takes advantage of the nonlinear output capacitor to shape the voltage waveform. The nonlinear capacitor generates substantial second harmonic voltage with smal
Autor:
Jing Wang, Raymond S. Pengelly
Publikováno v:
IEEE Microwave Magazine. 15:82-84
The 2014 Wireless and Microwave Conference (WAMICON 2014) is the 15th consecutive WAMICON to be held in Florida. WAMICON 2014 is being held, together with the one-day Automated RF Techniques Group (ARFTG) Conference at the Marriott Waterside Hotel an
Publikováno v:
IEEE Microwave Magazine. 10:126-133
The IEEE MTT-5 student design competition for high-efficiency PAs provides the opportunity for the student to do an in-depth study of a PA from theoretical concept and analysis to fabrication and testing. This competition motivates many students to h
Autor:
Zhancang Wang, Raymond S. Pengelly
Publikováno v:
WAMICON 2014.
A novel load network design for limited harmonic manipulations to implement a transmission line waveform engineered radio frequency power amplifier for LTE applications is presented in this paper, with the target to achieve quasi-linear efficiency du
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such multilayered wide bandgap structures and assemblies can be very high compared with other t
Autor:
Raymond S. Pengelly
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
The early development of GaAs FET monolithic microwave integrated circuits (MMICs) for phased array radar applications at Plessey in the UK over the period of 1975 through 1989 is described. Following the introduction of a basic GaAs MMIC fabrication
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005..
A Doherty amplifier has been constructed using small surface-mount 2-stage 30 W hybrid amplifier modules. These modules offer higher gain and simpler matching than do discrete transistors. This 26 dB gain Doherty amplifier uses a conventional 2-way t