Zobrazeno 1 - 10
of 753
pro vyhledávání: '"Raychaudhuri, A K"'
Autor:
Jana, Anupam, Sahoo, Sophia, Chowdhury, Sourav, Mandal, Arup Kumar, Choudhary, R. J., Phase, D. M., Raychaudhuri, A. K.
The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in ou
Externí odkaz:
http://arxiv.org/abs/2106.06319
Publikováno v:
J. Phys. Chem. C 122(2018)8564
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid
Externí odkaz:
http://arxiv.org/abs/2007.12367
Publikováno v:
J. Phys.: Condens. Matter 31 (2019) 145603
We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{
Externí odkaz:
http://arxiv.org/abs/2007.12370
We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise
Externí odkaz:
http://arxiv.org/abs/2007.07067
Autor:
Aggarwal, Vishal Kumar, Ghatak, Ankita, Kanjilal, Dinakar, Kabiraj, Debdulal, Singha, Achintya, Bysakh, Sandip, Medda, Samar Kumar, Chakraborty, Supriya, Raychaudhuri, A. K.
Publikováno v:
Materials Science & Engineering B 260 (2020) 114616
The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid T
Externí odkaz:
http://arxiv.org/abs/2007.05897
Publikováno v:
Semicond. Sci. Technol. 35 (2020) 025020
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combi
Externí odkaz:
http://arxiv.org/abs/2007.05777
We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 3
Externí odkaz:
http://arxiv.org/abs/2005.09866
Akademický článek
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Akademický článek
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Publikováno v:
J. Chem. Phys. vol. 146, page 164301 (2017)
Using spin polarized density functional theory (DFT) based calculations, combined with ab-initio molecular dynamics simulation, we carry out a systematic investigation of the bimetallic Ni$_{13-n}$Ag$_n$ nano clusters, for all compositions. This incl
Externí odkaz:
http://arxiv.org/abs/1705.01470