Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ray-Chern Deng"'
Autor:
Horng-Chih Lin, Ruey Ching Twu, Chun-Yen Chang, Jandel Lin, Ray Chern Deng, Tan Fu Lei, Hsiao Yi Lin
Publikováno v:
Solid-State Electronics. 38:2029-2033
In situ boron-doped polycrystalline Si 1− x Ge x (poly-Si 1− x Ge x ) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 10 12 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18c8ce9163a9c938a79612c6bd21575
https://doi.org/10.1016/0038-1101(95)00030-w
https://doi.org/10.1016/0038-1101(95)00030-w
Autor:
Hsiao Yi Lin, Jandel Lin, Ray Chern Deng, Horng-Chih Lin, P. J. Wang, Chun-Yen Chang, Tz Gwei Jung
Publikováno v:
Journal of Applied Physics. 76:1572-1577
The deposition and properties of in situ boron‐doped polycrystalline silicon (poly‐Si) films grown at 550 °C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f3c5c0075d6289e049631a2311373a
https://doi.org/10.1063/1.357735
https://doi.org/10.1063/1.357735
Autor:
Peter Williams, Ray Chern Deng
Publikováno v:
Analytical Chemistry. 66:1890-1896
The energy distributions of the ions produced in a reversed hollow cathode glow discharge ion source were studied using a Cameca IMS 3f mass spectrometer. Aluminum cathodes containing various impurities at concentrations of a few hundred parts per mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2abbaa4ef44ca693c23144da9945b9
https://doi.org/10.1021/ac00083a019
https://doi.org/10.1021/ac00083a019
Autor:
Chih Yeh Chao, Hsiao Yi Lin, P. J. Wang, Ray Chern Deng, Tze Guei Jung, Tan Fu Lei, Horng-Chih Lin, Jandel Lin, Chun-Yen Chang
Publikováno v:
Journal of Applied Physics. 74:5395-5401
Deposition of in situ boron‐doped polycrystalline silicon‐germanium (poly‐Si1−xGex) films at temperatures below 550 °C was investigated using an ultrahigh‐vacuum chemical‐ vapor‐deposition system. These films with a fine grain structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50042f3d65f0aa89781904780e9045f3
https://doi.org/10.1063/1.354244
https://doi.org/10.1063/1.354244
Publikováno v:
Journal of Materials Research. 5:1017-1022
The simultaneous gettering of iron and nickel in a float-zone silicon wafer in the (100) orientation and implanted with 2.5 ⊠ 1015 argon ions/cm2 at 280 keV has been investigated. Iron was deposited on one half of the back surface of the wafer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff4ffe5646d22e982bbd3e39451cedd
https://doi.org/10.1557/jmr.1990.1017
https://doi.org/10.1557/jmr.1990.1017
Autor:
Hsiao Yi Lin, Jandel Lin, P. J. Wang, Tan Fu Lei, Horng-Chih Lin, Ray Chern Deng, Chun-Yen Chang
Publikováno v:
Applied Physics Letters. 64:763-765
We report on the deposition of in situ boron‐doped polycrystalline Si films on the SiO2 surface with reduced growth pressures at 550 °C. The deposition rate of these films decreased as the doping level was greater than 1019 cm−3. Such a result i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74eac63330d54338cba6a9d8e4f029dc
https://doi.org/10.1063/1.111005
https://doi.org/10.1063/1.111005
Autor:
Jandel Lin, P. J. Wang, Horng-Chih Lin, Chih‐Yeh Chao, Ray‐Chern Deng, Hsiao-Yi Lin, Chun-Yen Chang, Tan Fu Lei
Publikováno v:
Applied Physics Letters. 63:1525-1527
The deposition of in situ heavily boron‐doped polycrystalline silicon (poly‐Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as‐d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e522568e282604ee46d2bb030489520
https://doi.org/10.1063/1.110737
https://doi.org/10.1063/1.110737
Publikováno v:
Applied Physics Letters. 63:1197-1199
The interface structural evolution of arsenic‐doped polycrystalline silicon thin films on a silicon (100) single crystal substrate was studied by cross‐sectional high resolution transmission electron microscopy and secondary ion mass spectrometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eff984f52bd0360002002f30c044e8a2
https://doi.org/10.1063/1.109769
https://doi.org/10.1063/1.109769
Factors affecting precision and accuracy in quantitative analysis by secondary ion mass spectrometry
Autor:
Ray Chern Deng, Peter Williams
Publikováno v:
Analytical Chemistry. 61:1946-1948
En analyse quantitative par spectrometrie SIMS utilisant des etalons externes, la fidelite et la precision des mesures sont alterees par le mauvais alignement des echantillons et les distributions d'energie differentes des ions secondaires. Cette etu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a89088499fef010acc6bdc33691707
https://doi.org/10.1021/ac00192a035
https://doi.org/10.1021/ac00192a035
Autor:
Horng-Chih Lin, Hsiao-Yi Lin, Chun-Yen Chang, Tan-Fu Lei, Wang, P.J., Ray-Chern Deng, Jandel Lin
Publikováno v:
Applied Physics Letters; 2/7/1994, Vol. 64 Issue 6, p763, 3p, 2 Graphs