Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ray-Chern Deng"'
Autor:
Horng-Chih Lin, Ruey Ching Twu, Chun-Yen Chang, Jandel Lin, Ray Chern Deng, Tan Fu Lei, Hsiao Yi Lin
Publikováno v:
Solid-State Electronics. 38:2029-2033
In situ boron-doped polycrystalline Si 1− x Ge x (poly-Si 1− x Ge x ) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 10 12 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18c8ce9163a9c938a79612c6bd21575
https://doi.org/10.1016/0038-1101(95)00030-w
https://doi.org/10.1016/0038-1101(95)00030-w
Autor:
Hsiao Yi Lin, Jandel Lin, Ray Chern Deng, Horng-Chih Lin, P. J. Wang, Chun-Yen Chang, Tz Gwei Jung
Publikováno v:
Journal of Applied Physics. 76:1572-1577
The deposition and properties of in situ boron‐doped polycrystalline silicon (poly‐Si) films grown at 550 °C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f3c5c0075d6289e049631a2311373a
https://doi.org/10.1063/1.357735
https://doi.org/10.1063/1.357735
Autor:
Peter Williams, Ray Chern Deng
Publikováno v:
Analytical Chemistry. 66:1890-1896
The energy distributions of the ions produced in a reversed hollow cathode glow discharge ion source were studied using a Cameca IMS 3f mass spectrometer. Aluminum cathodes containing various impurities at concentrations of a few hundred parts per mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2abbaa4ef44ca693c23144da9945b9
https://doi.org/10.1021/ac00083a019
https://doi.org/10.1021/ac00083a019
Autor:
Chih Yeh Chao, Hsiao Yi Lin, P. J. Wang, Ray Chern Deng, Tze Guei Jung, Tan Fu Lei, Horng-Chih Lin, Jandel Lin, Chun-Yen Chang
Publikováno v:
Journal of Applied Physics. 74:5395-5401
Deposition of in situ boron‐doped polycrystalline silicon‐germanium (poly‐Si1−xGex) films at temperatures below 550 °C was investigated using an ultrahigh‐vacuum chemical‐ vapor‐deposition system. These films with a fine grain structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50042f3d65f0aa89781904780e9045f3
https://doi.org/10.1063/1.354244
https://doi.org/10.1063/1.354244
Publikováno v:
Journal of Materials Research. 5:1017-1022
The simultaneous gettering of iron and nickel in a float-zone silicon wafer in the (100) orientation and implanted with 2.5 ⊠ 1015 argon ions/cm2 at 280 keV has been investigated. Iron was deposited on one half of the back surface of the wafer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff4ffe5646d22e982bbd3e39451cedd
https://doi.org/10.1557/jmr.1990.1017
https://doi.org/10.1557/jmr.1990.1017
Autor:
Hsiao Yi Lin, Jandel Lin, P. J. Wang, Tan Fu Lei, Horng-Chih Lin, Ray Chern Deng, Chun-Yen Chang
Publikováno v:
Applied Physics Letters. 64:763-765
We report on the deposition of in situ boron‐doped polycrystalline Si films on the SiO2 surface with reduced growth pressures at 550 °C. The deposition rate of these films decreased as the doping level was greater than 1019 cm−3. Such a result i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74eac63330d54338cba6a9d8e4f029dc
https://doi.org/10.1063/1.111005
https://doi.org/10.1063/1.111005
Autor:
Jandel Lin, P. J. Wang, Horng-Chih Lin, Chih‐Yeh Chao, Ray‐Chern Deng, Hsiao-Yi Lin, Chun-Yen Chang, Tan Fu Lei
Publikováno v:
Applied Physics Letters. 63:1525-1527
The deposition of in situ heavily boron‐doped polycrystalline silicon (poly‐Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as‐d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e522568e282604ee46d2bb030489520
https://doi.org/10.1063/1.110737
https://doi.org/10.1063/1.110737
Publikováno v:
Applied Physics Letters. 63:1197-1199
The interface structural evolution of arsenic‐doped polycrystalline silicon thin films on a silicon (100) single crystal substrate was studied by cross‐sectional high resolution transmission electron microscopy and secondary ion mass spectrometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eff984f52bd0360002002f30c044e8a2
https://doi.org/10.1063/1.109769
https://doi.org/10.1063/1.109769
Autor:
Horng-Chih Lin, Hsiao-Yi Lin, Chun-Yen Chang, Tan-Fu Lei, Wang, P.J., Ray-Chern Deng, Jandel Lin
Publikováno v:
Applied Physics Letters; 2/7/1994, Vol. 64 Issue 6, p763, 3p, 2 Graphs
Publikováno v:
Applied Physics Letters; 8/30/1993, Vol. 63 Issue 9, p1197, 3p, 8 Black and White Photographs, 2 Graphs