Zobrazeno 1 - 10
of 207
pro vyhledávání: '"Ray R. LaPierre"'
Autor:
Mohammed Zeghouane, Gabin Grégoire, Emmanuel Chereau, Geoffrey Avit, Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid, Pierre-Marie Coulon, Philip Shields, Nebile Isik Goktas, Ray R. LaPierre, Agnès Trassoudaine, Yamina André, Evelyne Gil
Publikováno v:
Crystal Growth & Design. 23:2120-2127
Autor:
Emmanuel Chereau, Vladimir G. Dubrovskii, Gabin Grégoire, Geoffrey Avit, Philipp Staudinger, Heinz Schmid, Catherine Bougerol, Pierre-Marie Coulon, Philip A. Shields, Agnès Trassoudaine, Evelyne Gil, Ray R. LaPierre, Yamina André
Publikováno v:
Crystal Growth & Design.
Publikováno v:
Nano Letters. 22:1345-1349
Twinning superlattices (TSLs) are a growing class of semiconductor structures proposed as a means of phonon and optical engineering in nanowires (NWs). In this work, we examine TSL formation in Te-doped GaAs NWs grown by a self-assisted vapor-liquid-
Publikováno v:
The Journal of Physical Chemistry Letters. 12:1275-1283
GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were exami
Publikováno v:
Nano Letters. 20:3344-3351
Recent investigations of III-V semiconductor nanowires have revealed periodic zinc-blende twins, known as twinning superlattices, that are often induced by a high-impurity dopant concentration. In the present study, the relationship between the nanow
Autor:
Ray R. LaPierre
Publikováno v:
Photonics for Quantum 2020.
III-V compound semiconductor nanowires (NWs) are being developed for the next generation of optoelectronic devices such as photodetectors, photovoltaics, betavoltaics and thermoelectrics. The self-assisted vapor-liquid-solid method is now a well-esta
Autor:
Erwine Pargon, S. Ghanad-Tavakoli, Camille Petit-Etienne, Jean-Pierre Landesman, Ray R. LaPierre, Juan Jiménez, N Isik-Goktas, Christophe Levallois
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩
Journal of Physics D: Applied Physics, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩
Journal of Physics D: Applied Physics, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Producción Científica
Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAsxP$_{1-x}$ quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were
Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAsxP$_{1-x}$ quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5238f1fa78c5752bbc9253c118111b60
https://hal.archives-ouvertes.fr/hal-03323873
https://hal.archives-ouvertes.fr/hal-03323873
Autor:
Evelyne Gil, Eric Tournié, Kirsten E. Moselund, Ray R. LaPierre, Curtis Goosney, Nebile Isik Goktas, Yamina André, Heinz Schmid, Thierry Taliercio, Gabin Grégoire, Philipp Staudinger, Mohammed Zeghouane, Agnès Trassoudaine
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
International audience; We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor−solid method. Well-ordered InAs NWs were grown on GaAs(111)B and Si(111) substrates patterned with a dielectric mask using hydride vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e861644e6f89d10533d101bbebe8effb
https://hal.archives-ouvertes.fr/hal-03336861
https://hal.archives-ouvertes.fr/hal-03336861
Autor:
A. S. Sokolovskii, Ray R. LaPierre, Nebile Isik Goktas, Vladimir G. Dubrovskii, Debra Paige Wilson
Publikováno v:
IEEE Journal of Photovoltaics. 9:1225-1231
GaAs nanowire (NW) arrays were grown on Si substrates by selective-area molecular beam epitaxy (MBE) using the self-assisted vapor-liquid-solid (VLS) method. In the self-assisted VLS method, the GaAs NW diameter is determined by the size of a Ga drop
Autor:
N. Isik Goktas, C. Beswick, Niyazi Serdar Sariciftci, Ray R. LaPierre, Kunyu Liang, H. Dawood, A. Getachew, Herwig Heilbrunner, Ramis Arbi, Lok Shu Hui, Muhammad Bilal Munir, Gregory Hanta, Ayse Turak, M. C. Scharber
Publikováno v:
ACS Applied Nano Materials. 2:4121-4132
Hybrid organic–inorganic halide perovskites have emerged as a disruptive technology in a number of fields, and recently, there has been increased interest in developing nanostructured perovskite materials, due to their extremely high photoluminesce