Zobrazeno 1 - 10
of 751
pro vyhledávání: '"Ray‐Hua Horng"'
Autor:
Shambel Abate Marye, Xin-Ying Tsai, Ravi Ranjan Kumar, Fu-Gow Tarntair, Ray Hua Horng, Niall Tumilty
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract The development of next-generation materials such as hBN and Ga2O3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type
Externí odkaz:
https://doaj.org/article/4401bee5c4e44351a7efb8fc8655ce86
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024)
Abstract In this study, arrays of μLEDs in four different sizes (5 × 5 μm2, 10 × 10 μm2, 25 × 25 μm2, 50 × 50 μm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single lay
Externí odkaz:
https://doaj.org/article/2084a40551ed46129c6dc96c4f7d5599
Autor:
Shao-Hua Lin, Yu-Yun Lo, Yu-Hsuan Hsu, Chien-Chung Lin, Hsiao-Wen Zan, Yi-Hsin Lin, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024)
Abstract In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication proces
Externí odkaz:
https://doaj.org/article/9926f8d15ce247a89f1bd77f06a082ec
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned
Externí odkaz:
https://doaj.org/article/b0d353cd26684ead9926d63917b2dc51
Autor:
Yun-Cheng Hsu, Yu-Hsuan Hsu, Chien-Chung Lin, Ming Hsien Wu, Hao Chung Kuo, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Next Nanotechnology, Vol 7, Iss , Pp 100101- (2025)
This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emit
Externí odkaz:
https://doaj.org/article/4129a32d549c4dc498279341e6ce04ed
Publikováno v:
Applied Surface Science Advances, Vol 24, Iss , Pp 100661- (2024)
This study successfully grew ꞵ-Ga2O3 epitaxial films on silicon carbide substrates by metalorganic chemical vapor deposition and fabricated vertical Schottky barrier diodes (SBDs), which were annealed in a high temperature furnace. The high surface
Externí odkaz:
https://doaj.org/article/3342eba122e74e9f936ae749b19bb002
Autor:
Chia Hao Yu, Wei Hsiang Chiang, Yi-Ho Chen, Seiji Samukawa, Dong Sing Wuu, Chin-Han Chung, Ching-Lien Hsiao, Ray Hua Horng
Publikováno v:
Materials Today Advances, Vol 23, Iss , Pp 100519- (2024)
This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (N
Externí odkaz:
https://doaj.org/article/f68c5c76581d4074bd8a0755f3da6f39
Autor:
Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Catherine Langpoklakpam, Thien Sao Ngo, Pei-Jung Wang, Yu-Cheng Kao, Yi-Kai Hsiao, Niall Tumilty, Hao-Chung Kuo, Tian-Li Wu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100499- (2024)
Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3
Externí odkaz:
https://doaj.org/article/661d2bf1d63c48fda8b5fd86ed82dea0
Autor:
Yu-Hsuan Hsu, Yun-Cheng Hsu, Chien-Chung Lin, Yi-Hsin Lin, Dong-Sing Wuu, Hao-Chung Kuo, Seiji Samukawa, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100496- (2024)
In this study, micro-light emitting diodes array (μLEDs) with dimensions of 5 μm and 15 μm chip size were fabricated using Neutral Beam Etching (NBE) processes. Size-dependent issues of μLEDs processed by traditional inductively coupled plasma-re
Externí odkaz:
https://doaj.org/article/8791b2881e164017b5f1692ae1184ae5
Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching
Autor:
Yu-Yun Lo, Yi-Ho Chen, Yun-Cheng Hsu, Tzu-Yi Lee, Yu-Ying Hung, Yu-Cheng Kao, Hsiao-Wen Zan, Dong- Sing Wuu, Hao-Chung Kuo, Seiji Samukawa, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100485- (2024)
The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral b
Externí odkaz:
https://doaj.org/article/3411206bf11e465db21ce6fd9c2bab3b