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pro vyhledávání: '"Rawat Mini"'
Autor:
Mohammed Fakhruddin, Phoumra Tan, James Karp, Rawat Mini, Vassili Kireev, Dean Tsaggaris, Michael J. Hart
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Methodology proposed that relates 200V CDM voltage specification of S20.20-2014 standard to a realistic 100–200mA CDM peak current for inter-die interfaces. Tribology is considered to be the source of charge accumulation on the bare die during 3D/2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df56eab0687b941fa75b6e2b2a822347
https://doi.org/10.1109/irps.2016.7574556
https://doi.org/10.1109/irps.2016.7574556
Publikováno v:
2012 IEEE 30th VLSI Test Symposium (VTS); 1/ 1/2012, p68-73, 6p