Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

Autor: Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, Darrell G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, Xiaoxing Xi

Publikováno v: npj Quantum Materials, Vol 2, Iss 1, Pp 1-7 (2017)

Applied physics: New technique for oxide interfaces Recent advances in synthesizing and engineering oxide interfaces and heterostructures have provided a powerful strategy for creating new artificial structures exhibiting phenomena not possible in ot

Externí odkaz: https://doaj.org/article/2d8ef43026114075a8236793eab37b9a

Electronic Structure of a Graphene-like Artificial Crystal of NdNiO

Autor: Arian, Arab, Xiaoran, Liu, Okan, Köksal, Weibing, Yang, Ravini U, Chandrasena, Srimanta, Middey, Mikhail, Kareev, Siddharth, Kumar, Marius-Adrian, Husanu, Zhenzhong, Yang, Lin, Gu, Vladimir N, Strocov, Tien-Lin, Lee, Jan, Minár, Rossitza, Pentcheva, Jak, Chakhalian, Alexander X, Gray

Publikováno v: Nano letters. 19(11)

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::dd534cf1b7efc65c8b9cf74842178e97
https://pubmed.ncbi.nlm.nih.gov/31644875

Electronic Structure of a Graphene-like Artificial Crystal of NdNiO3

Autor: Tien-Lin Lee, Ravini U. Chandrasena, Zhenzhong Yang, Rossitza Pentcheva, Alexander X. Gray, Mikhail Kareev, Jan Minár, Xiaoran Liu, Marius-Adrian Husanu, Weibing Yang, Okan Köksal, Srimanta Middey, Vladimir N. Strocov, Arian Arab, Lin Gu, Siddharth Kumar, Jak Chakhalian

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a16ea4e319e168cce3fdd32f0a21af17
http://hdl.handle.net/11025/39562

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Autor: Xiaoxing Xi, Pasquale Orgiani, Ravini U. Chandrasena, Andrew J. Millis, Maryam Golalikhani, George E. Sterbinsky, Bruce A. Davidson, J. Ciston, P. Shafer, Dario Arena, Hyowon Park, Jianming Bai, Leila Kasaei, Elke Arenholz, Qingyu Lei, Alexander X. Gray

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Golalikhani, M; Lei, Q; Chandrasena, RU; Kasaei, L; Park, H; Bai, J; et al.(2018). Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3films. Nature Communications, 9(1). doi: 10.1038/s41467-018-04546-5. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/4h42t3tn
Nature communications, vol 9, iss 1
Nature communications 9 (2018): 1–8. doi:10.1038/s41467-018-04546-5
info:cnr-pdr/source/autori:Golalikhani M., Lei Q., Chandrasena R.U., Kasaei L., Park H., Bai J., Orgiani P., Ciston J., Sterbinsky G.E., Arena D.A., Shafer P., Arenholz E., Davidson B.A., Millis A.J., Gray A.X., Xi X.X./titolo:Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films/doi:10.1038%2Fs41467-018-04546-5/rivista:Nature communications/anno:2018/pagina_da:1/pagina_a:8/intervallo_pagine:1–8/volume:9
Nature Communications

The nature of the metal-insulator transition in thin films and superlattices of LaNiO3 only a few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bc890e49237e3610da278bb9ede96e3

Erratum Inter Layer Coupling Induced Valence Band Edge Shift in Mono to Few Layer MoS2

Autor: Daniel J. Trainer, Aleksei V. Putilov, Cinzia Di Giorgio, Timo Saari, Baokai Wang, Mattheus Wolak, Ravini U. Chandrasena, Christopher Lane, Tay-Rong Chang, Horng-Tay Jeng, Hsin Lin, Florian Kronast, Alexander X. Gray, Xiaoxing Xi, Jouko Nieminen, Arun Bansil, Maria Iavarone

Publikováno v: Scientific Reports

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electroni

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9197491528bcb455141e504a429d869e
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=94823