Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Ravindra K, Kanjolia"'
Autor:
Mansour Moinpour, Jacob Spiegelman, Michael Breeden, Charles H. Winter, Victor Wang, Ravindra K. Kanjolia, Srinivas D. Nemani, Jacob Woodruff, Steven Wolf, Andrew C. Kummel, Ashay Anurag, Daniel Moser, Keith Tatseun Wong
Publikováno v:
ACS Applied Nano Materials. 4:8447-8454
Autor:
James Edgar Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent A. Sperling, Ravindra K. Kanjolia
Publikováno v:
Journal of Crystal Growth. 607:127102
Autor:
Kamesh Mullapudi, Konner E. K. Holden, Jessica L. Peterson, Charles L. Dezelah, Daniel F. Moser, Ravindra K. Kanjolia, Douglas J. Tweet, John F. Conley
Publikováno v:
Journal of Vacuum Science & Technology A. 41:012406
Tungsten oxide–silicon dioxide (WOx–SiOy) composite thin films were deposited for the first time via the remote oxygen plasma-enhanced atomic layer deposition (ALD) process using a novel metal-organic heteronuclear and heteroleptic precursor, bis
Autor:
Charles L. Dezelah, William E. Kaden, Parag Banerjee, Asim Khaniya, Duy Le, Talat S. Rahman, Ravindra K. Kanjolia, Jacob Woodruff, Zhengning Gao
Publikováno v:
Chemistry of Materials. 31:1304-1317
Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent, η4-2,3-dimethylbutadiene Ruthenium tricarbonyl (Ru(DMBD)(CO)3) and H2O, Ru films are deposited at a rate of 0
Autor:
Berc, Kalanyan, Ryan, Beams, Michael B, Katz, Albert V, Davydov, James E, Maslar, Ravindra K, Kanjolia
Publikováno v:
J Vac Sci Technol A
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS(2) rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend
Supplemental material, sj-pdf-1-asp-10.1177_0003702819885182 for Nondispersive Infrared Gas Analyzer for Partial Pressure Measurements of a Tantalum Alkylamide During Vapor Deposition Processes by James E. Maslar, William A. Kimes, Brent A. Sperling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609bbd866324b366fef0b63c126d8b40
Autor:
Charles L. Dezelah, L. Fabián Peña, Yves J. Chabal, Joseph P. Klesko, Rezwanur Rahman, Eric C. Mattson, Daniel Moser, Charith E. Nanayakkara, Aaron Dangerfield, Thomas L’Esperance, Ravindra K. Kanjolia
Publikováno v:
Chemistry of Materials. 30:970-981
The need for the conformal deposition of TiO2 thin films in device fabrication has motivated a search for thermally robust titania precursors with noncorrosive byproducts. Alkylamido-cyclopentadienyl precursors are attractive because they are readily
Autor:
Adithi Krishnaprasad, Durjoy Dev, Jeya Prakash Ganesan, Tania Roy, Ravindra K. Kanjolia, Daniel Moser, Parag Banerjee
Publikováno v:
ECS Meeting Abstracts. :879-879
Autor:
Ravindra K. Kanjolia, Agnes Derecskei, Xinjian Lei, Ronald Martin Pearlstein, Robert Ridgeway, Rohit Narayanan Kavassery Ramesh, Sumit Agarwal, Xuezhong Jiang, Ryan J. Gasvoda, Haripin Chandra, Bhushan Zope, Wanxing Xu, Guo Liu
Publikováno v:
ECS Meeting Abstracts. :854-854
Autor:
Daniel Alvarez, Mansour Moinpour, Scott T. Ueda, Jeff Spiegelman, Aaron McLeod, Jacob Woodruff, Andrew C. Kummel, Ravindra K. Kanjolia
Publikováno v:
ECS Meeting Abstracts. :624-624