Zobrazeno 1 - 10
of 462
pro vyhledávání: '"Ravindra, G."'
Publikováno v:
Physical Review B 109, L081113 (2024)
The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic properties. In this letter, an explicit experimental evidence of magneto
Externí odkaz:
http://arxiv.org/abs/2402.16330
Autor:
Biswas, Indranil, Ravindra, G. V.
We prove that on a general hypersurface in $\mathbb{P}^N$ of degree $d$ and dimension at least $2$, if an arithmetically Cohen-Macaulay (ACM) bundle $E$ and its dual have small regularity, then any non-trivial Hodge class in $H^{n}(X, E\otimes\Omega^
Externí odkaz:
http://arxiv.org/abs/2306.03587
For a graph $G$ with the vertex set $V(G)$ and the edge set $E(G)$ and a star subgraph $S$ of $G$, let $\alpha_S(G)$ be the maximum number of vertices in $G$ such that no two of them are in the same star subgraph $S$ and $\theta_S(G)$ be the minimum
Externí odkaz:
http://arxiv.org/abs/2305.03540
Publikováno v:
Phys. Rev. B 107, 165305, 2023
The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducting heterostructures under an applied strain gradient. The resulting dy
Externí odkaz:
http://arxiv.org/abs/2304.05759
The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topological electronic magnetism of phonons is also expected to give rise to
Externí odkaz:
http://arxiv.org/abs/2110.08431
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoelectronic effect in a conducting multiferroic material give rise to spat
Externí odkaz:
http://arxiv.org/abs/2110.04940
The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structure with metal. In case of ferromagnetic metal and Si bilayer structure
Externí odkaz:
http://arxiv.org/abs/2110.04939
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture or spatiall
Externí odkaz:
http://arxiv.org/abs/2110.04937
Autor:
Lou, Paul C., Katailiha, Anand, Bhardwaj, Ravindra G., Beyermann, Ward, Mohata, Dheeraj, Kumar, Sandeep
Publikováno v:
Physical Review B (Vol. 105, No. 24),2022
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called flexoelectro
Externí odkaz:
http://arxiv.org/abs/2110.04938
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum space due to inhomogeneity. The inhomogeneous (or gradient) medium can
Externí odkaz:
http://arxiv.org/abs/2110.04936