Zobrazeno 1 - 10 of 13 pro vyhledávání: '"Ravin Ginige"'
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Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
Autor: Daniel Chrastina, Ravin Ginige, Just Hilgarth, Mircea Modreanu, Brian Corbett, H. von Känel, Giovanni Isella, C Barrett
A virtual substrate consisting of a Ge layer grown directly on Si without an intervening SiGe graded layer is characterized. The nominally 100% Ge overlayer is fully relaxed and contains a small amount (3%) of unintentional Si. A dislocation density
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc4fe1ea24047f50ba9567d31f26bab8
http://hdl.handle.net/11311/553592
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3
InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications
Autor: Massimo Mazzer, Graham Clarke, James P. Connolly, C.C. Button, Lucia Nasi, Carsten Rohr, Ian Ballard, Ravin Ginige, Keith W. J. Barnham, Geoff Hill, J.S. Roberts, Paul Abbott
Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2006, 100 (11), pp.114510. ⟨10.1063/1.2398466⟩
Journal of applied physics 100 (2006): 114510-1. doi:10.1063/1.2398466
info:cnr-pdr/source/autori:Rohr C. a; Abbott P. a; Ballard I. a; Connolly J.P. a; Barnham K.W.J. a; Mazzer M. b; Button C. c; Nasi L. d; Hill G. e; Roberts J.S. e; Clarke G. f; Ginige R. g/titolo:InP-based lattice-matched InGaAsP and strain-compensated InGaAs%2FInGaAs quantum well cells for thermophotovoltaic applications/doi:10.1063%2F1.2398466/rivista:Journal of applied physics/anno:2006/pagina_da:114510-1/pagina_a:/intervallo_pagine:114510-1/volume:100
Quantum well cells (QWCs) for thermophotovoltaic (TPV) applications are demonstrated in the InGaAsP material system lattice matched to the InP substrate and strain-compensated InGaAs/InGaAs QWCs also on InP substrates. We show that lattice-matched In
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b7a66efa0cc8f185e6c4564d32c0b61
https://hal-centralesupelec.archives-ouvertes.fr/hal-02927585
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4
High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications
Autor: Brian Corbett, V. Wong Kwan, Ravin Ginige, Karim Cherkaoui, Carmel Kelleher
This article analyzes and explains the observed temperature dependence of the forward dark current of lattice matched In0.53Ga0.47As on InP diodes as a function of voltage. The experimental results show, at high temperatures, the characteristic curre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6e8af2c631fd0a419ac2bbf85768573
https://hdl.handle.net/10468/4235
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5
Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes
Autor: Brian Corbett, Ravin Ginige, Gerard Clarke, Carmel Kelleher
We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW device
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92babeae3dcebb70b636c64dc6a0547c
https://hdl.handle.net/10468/4396
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6
A Comparative Study of Front and Back Illuminated Strain Balanced InGaAs MQW Thermophotovoltaic Cells on n-InP Substrate For High Power Applications
Autor: Ian Ballard, Just Hilgarth, Graham Clarke, Paul Abbott, Brian Corbett, Massimo Mazzer, Keith W. J. Barnham, Ravin Ginige
Publikováno v: ResearcherID
We have processed and characterised front (P‐Grid) and back (N‐Grid) illuminated strain balanced multi‐quantum well InGaAs/InP thermophotovoltaic cells with a bandedge at 1980nm. We find that the inverted cells (N‐Grid) dark currents are comp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd5313fb3152be23ea54b49e06c18990
https://doi.org/10.1063/1.1841926
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7
The Design, Fabrication and Evaluation of InGaAs/InP TPV Cells for Commercial Applications
Autor: Just Hilgarth, Graham Clarke, Brian Corbett, Carmel Kelleher, Ravin Ginige
Publikováno v: AIP Conference Proceedings.
We report on the design, fabrication and evaluation of InGaAs/InP TPV cells. The fabrication process was developed for single wafer laboratory processing of lattice matched In0.53Ga0.47As cells and subsequently adapted for batch processing in industr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a706f25b67070f56ce49b310ec8143fd
https://doi.org/10.1063/1.1539390
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8
Characterisation of strain-compensated InGaAs/InGaAs quantum well cells for TPV applications
Autor: Ian Ballard, Graham Clarke, Keith W. J. Barnham, Lucia Nasi, James P. Connolly, Carsten Rohr, Paul Abbott, M. Mazzer, Ravin Ginige
Publikováno v: Fifth Conference on Thermophotovoltaic Generation of Electricity, Roma, 2003
info:cnr-pdr/source/autori:Abbott P., Rohr C., Connolly J.P., Ballard I., Barnham K.W.J., Ginige R., Clarke G., Nasi L., Mazzer M./congresso_nome:Fifth Conference on Thermophotovoltaic Generation of Electricity/congresso_luogo:Roma/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
ResearcherID
Thermophotovoltaic (TPV) generators can reduce pollution by lowering their operating temperature, but the choice of semiconductor materials for this purpose is limited. We present results on an InGaAs p‐n cell lattice‐matched to InP which is opti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1629746adf550d16cf7b57072329aa5
https://publications.cnr.it/doc/85778
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9
Electron beam induced current studies of strain balanced InGaAs/InGaAs multiquantum wells
Autor: Paul Abbott, Graham Clarke, Ravin Ginige, D. Diso, S. Tundo, L Lazzarini, Carsten Rohr, G. Torsello, Keith W. J. Barnham, L. Nasi, M. Mazzer
Publikováno v: Materials science and technology 19 (2003): 977–980. doi:10.1179/026708303225004341
info:cnr-pdr/source/autori:Tundo S., Mazzer M., Lazzarini L., Nasi L., Torsello G., Diso D., Clarke G., Rohr C., Abbott P., Barnham K., Ginige R./titolo:Electron beam induced current studies of strain balanced InGaAs%2FInGaAs multiquantum wells/doi:10.1179%2F026708303225004341/rivista:Materials science and technology/anno:2003/pagina_da:977/pagina_a:980/intervallo_pagine:977–980/volume:19
Strain balanced InGaAs/InGaAs multiquantum well photovoltaic cells have been shown to be of great interest for thermophotovoltaic applications, where the absorption needs to extend well into the near infrared region to intercept most of the radiation
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5bc3ba5ca62801d41ee24dde345e281
https://publications.cnr.it/doc/32279
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10
A comparative study of bulk InGaAs and InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications
Autor: Carsten Rohr, Paul Abbott, Graham Clarke, Massimo Mazzer, Brian Corbett, K.W.J. Bamham, Ravin Ginige, James P. Connolly, Ian Ballard, S.W. Bland
Publikováno v: Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, May 2002, New Orleans, United States. pp.1058-1061, ⟨10.1109/PVSC.2002.1190788⟩
Scopus-Elsevier
One of the main requirements for thermophotovoltaic (TPV) systems powered by fuel combustion is a low level of pollution. To achieve this, low combustion temperatures are needed. The most efficient narrow band emitters emit at long wavelengths, neces
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ad0b3db86b3f945b106c1f0e656709b
https://hal.archives-ouvertes.fr/hal-02635743
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