Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Ravi Shankar, R."'
Autor:
José Gagliardino, Juan, Arechavaleta, Rosario, Goldberg Eliaschewitz, Freddy, Iglay, Kristy, Brodovicz, Kimberly, Gonzalez, Claudio D., Yu, Shengsheng, Ravi Shankar, R., Heisel, Olaf, Keown, Paul, Tunceli, Kaan
Publikováno v:
In Journal of Clinical & Translational Endocrinology March 2019 15:76-80
Autor:
Uttam Kumar Das, Geert Eneman, Ravi Shankar R. Velampati, Yogesh Singh Chauhan, K. B. Jinesh, Tarun K. Bhattacharyya
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1129-1135 (2018)
In this paper, we propose a trench MOS architecture for the upcoming 5 nm node and beyond logic transistor. The intended device has a gate formed vertically downward, with added spacers along the gate to S/D sidewall. In doing so, the recessed device
Externí odkaz:
https://doaj.org/article/ef8463e0ce0a40eeb6cf9f4df2676a57
Publikováno v:
International Journal of Scientific Research in Science, Engineering and Technology. :387-392
In industrial machine, there is often more than one entry point that might be used during the operation and maintenance functions. Typically, the lockout/tag-out procedures prior to entering the machine have been done using series-connected conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad81a920a90b498526ec2c63b24d4ac6
https://doi.org/10.32628/ijsrset229464
https://doi.org/10.32628/ijsrset229464
Publikováno v:
Micro & Nano Letters. 14:1274-1277
The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1–2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffe5bb0f3b3095d7446a0cdcbff2ed9
https://doi.org/10.1049/mnl.2019.0148
https://doi.org/10.1049/mnl.2019.0148
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:356-362
Colloidal synthesized metal nanoparticles (NPs) have great potential to be utilized as economically viable and efficient charge storage floating gate for the non-volatile memory (NVM). Present research work focuses on the NVM device application of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75915cf215d3682690cbf08a44ebf379
https://doi.org/10.1109/tsm.2018.2841661
https://doi.org/10.1109/tsm.2018.2841661
Publikováno v:
Journal of Electronic Materials. 47:3560-3567
Colloidal synthesis and size control of nickel (Ni) nanocrystals (NCs) below 10 nm are reported using a microwave synthesis method. The synthesised colloidal NCs have been characterized using x-ray diffraction, transmission electron microscopy (TEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a93068c18c0cdc68f1e5b83ddcdfd76
https://doi.org/10.1007/s11664-018-6200-2
https://doi.org/10.1007/s11664-018-6200-2
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:1774-1781
This paper presents nonvolatile memory characteristics of a quantum dot gate floating gate nonvolatile memory (QDNVM) that employs SiOx-cladded silicon quantum dots as discrete charge storage nodes of the floating gate. The cladding of Si quantum dot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9afbcfcf58386a3aecc97d735b74de8d
https://doi.org/10.1109/tvlsi.2016.2645795
https://doi.org/10.1109/tvlsi.2016.2645795
Publikováno v:
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO).
Paper describes a simple and cost effective process for non volatile memory (NVM) device. This method involves colloidal synthesis of cobalt nanoparticles for their application in spin coating based NVM device. Cobalt possesses appropriate work funct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddbfc4b47fb265b0a804553ea06e3f06
https://doi.org/10.1109/nano.2018.8626238
https://doi.org/10.1109/nano.2018.8626238
Akademický článek
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Publikováno v:
Journal of Technological Advances and Scientific Research. 1:184-188
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec68c61d601150222d5209008473c4d
https://doi.org/10.14260/jtasr/2015/23
https://doi.org/10.14260/jtasr/2015/23