Zobrazeno 1 - 10
of 219
pro vyhledávání: '"Ravi M. Todi"'
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the inv
Autor:
Navneet Jain, Ram Asra, Mahbub Rashed, Jeff Kim, Palanivel Balasubramaniam, Venkata Naresh Mudhireddy, Ravi M. Todi, Shibly S. Ahmed, Sunil Machha, Juhan Kim, Luke Lee
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In FinFET technology, layout and process design of experiments (DOEs) are established to assess silicon to spice correlation of alternative standard cell architecture such as double diffusion break (DDB) v/s single diffusion break (SDB). Also impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d98284a1c6e495712fc2b70f4c25299
https://doi.org/10.1109/edtm.2019.8731194
https://doi.org/10.1109/edtm.2019.8731194
Autor:
James Blatchford, Pala Balasubramaniam, Ravi M. Todi, Sushama Davar, Shibly S. Ahmed, Navneet Jain, Juhan Kim, Mahbub Rashed
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
Advanced Technology Development requires detailed and extensive Design and Technology Co-optimization (DTCO), from device to design to application, to balance system-dependent Power, Performance and Area (PPA) with manufacturability of the technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668338058f5f9390630d1e29d22d1a6e
https://doi.org/10.1109/edtm.2018.8421508
https://doi.org/10.1109/edtm.2018.8421508
Autor:
A. Mehta, S. Mahajan, Owen Hu, Kok Wai Johnny Chew, Kumaran Sundaram, Abdellatif Bellaouar, Palanivel Balasubramaniam, Jerome Ciavatti, Ram Asra, Jung-Suk Goo, Ravi M. Todi, H. S. Yang, David Harame, Jagar Singh, Abhijit Bandyopadhyay, S. Yamaguchi, Jen Shuang Wong, C. Kyono, Josef S. Watts, Shuming Li, D. K. Sohn, X. Zhang, Shesh Mani Pandey, E. Geiss, Srikanth Samavedam, Alexander L. Martin, AJ Bousquet, S. B. Mittal, Baofu Zhu
Publikováno v:
2017 Symposium on VLSI Technology.
This paper highlights a 14nm Analog and RF technology based on a logic FinFET platform for the first time. An optimized RF device layout shows excellent F t /F max of (314GHz/180GHz) and (285GHz/140GHz) for NFET and PFET respectively. A higher PFET R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908624ff7f92c092dc193d600d5ee234
https://doi.org/10.23919/vlsit.2017.7998154
https://doi.org/10.23919/vlsit.2017.7998154
Publikováno v:
Materials Science and Engineering: B. 176:878-882
We present the deposition and optical characterization of amorphous thin films of boron carbonitride (BCN). The BCN thin films were deposited in a radio frequency magnetron sputtering system using a B4C target. Films of different compositions were de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee01f5bd45d2cb77043a83a4394cb90
https://doi.org/10.1016/j.mseb.2011.05.010
https://doi.org/10.1016/j.mseb.2011.05.010
Publikováno v:
Optical Materials. 32:1274-1278
The high-temperature photoluminescence of Er-doped Si-rich SiO2 with and without silicon nanocrystals is studied at sample temperatures in the range 20–200 C. The optical properties of Er-doped Si-rich SiO2 with and without silicon nanocrystals are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7c5807fc82ec465cacbe321d2cf657
https://doi.org/10.1016/j.optmat.2010.04.037
https://doi.org/10.1016/j.optmat.2010.04.037
Autor:
Kalpathy B. Sundaram, Katayun Barmak, Bo Yao, Ravi M. Todi, Andrew P. Warren, Kevin R. Coffey
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1208-1212
The microstructure and the electronic work function of Pt–Ru alloy thin films spanning the compositional range from pure Pt to pure Ru were investigated. Nominally 50nm thick films were cosputtered from elemental targets in an ultrahigh vacuum cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e7113300ee08745fc96de36352ab88
https://doi.org/10.1116/1.2966422
https://doi.org/10.1116/1.2966422
Publikováno v:
Diamond and Related Materials. 17:944-948
Optical properties of amorphous thin films of silicon carbon boron nitride (Si–C–B–N) obtained by reactive sputtering has been studied. Compositional variations were obtained by changing the nitrogen and argon gas mixture ratio in the sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e9e7f4629130fc90c5d07018a84da1
https://doi.org/10.1016/j.diamond.2008.01.097
https://doi.org/10.1016/j.diamond.2008.01.097
Publikováno v:
Journal of Materials Science: Materials in Electronics. 20:144-148
Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silicon carbide (SiC) and boron nitride (BN) targets. As-deposited samples show distinct photoluminescence (PL) peaks at 465, 483 and 497 nm. The films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed8098dde66f1a911b303e5bcdc6b71
https://doi.org/10.1007/s10854-008-9667-4
https://doi.org/10.1007/s10854-008-9667-4
Publikováno v:
IEEE Transactions on Electron Devices. 54:807-813
This paper describes a systematic comparison of work function for the Pt-Ru binary-alloy metals, extracted from capacitance-voltage (C-V) characteristics of MOS capacitors and the current-voltage (I-V) and C-V characteristics of Schottky-barrier diod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd61b198aea2815361b2d9df6b00d00
https://doi.org/10.1109/ted.2007.892352
https://doi.org/10.1109/ted.2007.892352