Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ravi K. Mruthyunjaya"'
Autor:
Di Geng, Gregory N. Heiler, Timothy J. Tredwell, Mallory Mativenga, Jae Gwang Um, Jin Jang, Ravi K. Mruthyunjaya
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1330-1333
A high-gain source follower, utilizing oxide TFTs with a Corbino (circular) structure, is reported. Given the infinite output resistance exhibited by Corbino TFTs in the outer-drain condition (i.e., when the outer electrode is biased as the drain), t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f65bb2f6f07969d0ea3f0b8f3a94ed4
https://doi.org/10.1002/sdtp.10112
https://doi.org/10.1002/sdtp.10112
Autor:
Gregory N. Heiler, Ravi K. Mruthyunjaya, Mallory Mativenga, Jae Gwang Um, Timothy J. Tredwell, Jin Jang, Delwar Hossain Chowdhury
Publikováno v:
IEEE Transactions on Electron Devices. 62:869-874
We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO2) and bilayer (SiO2/SiN x ) passivation under high-humidity (80%) storage. During the 30 days of investigation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41df7cefacb5f033f39f03f41f5064c5
https://doi.org/10.1109/ted.2015.2392763
https://doi.org/10.1109/ted.2015.2392763
Autor:
Timothy J. Tredwell, Su Hwa Ha, Di Geng, Gregory N. Heiler, Jin Jang, Mallory Mativenga, Ravi K. Mruthyunjaya, Dong Han Kang
Publikováno v:
IEEE Transactions on Electron Devices. 61:3199-3205
We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6aa3264f80341d5f62ab49c6d7147a4
https://doi.org/10.1109/ted.2014.2338306
https://doi.org/10.1109/ted.2014.2338306
Autor:
Di Geng, Jae Kwang Um, Ravi K. Mruthyunjaya, Gregory N. Heiler, Mallory Mativenga, Jin Jang, Timothy J. Tredwell
Publikováno v:
SID Symposium Digest of Technical Papers. 45:705-708
The use of a Corbino thin-film transistor (TFT) as the driving-TFT in large-area active-matrix organic light-emitting diode (AMOLED) display pixels is reported. Given the infinite output resistance exhibited by the Corbino TFT beyond pinch-off, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37831cc6282b0cc145aa52556a9358d5
https://doi.org/10.1002/j.2168-0159.2014.tb00185.x
https://doi.org/10.1002/j.2168-0159.2014.tb00185.x
Autor:
Jaegwang Um, Gregory N. Heiler, Timothy J. Tredwell, Jin Jang, Di Geng, Suhui Lee, Sungjin An, Ravi K. Mruthyunjaya, Mallory Mativenga
Publikováno v:
IEEE Transactions on Electron Devices. 61:2106-2112
Intrinsic mobility and intrinsic channel resistance $(R_{\rm CH})$ of amorphous, In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with varying channel length $(L)$ are investigated using a gated four-probe back-channel-etched TFT design. The in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae8f198f2eaf2ef823fa62a4cb46c08
https://doi.org/10.1109/ted.2014.2318611
https://doi.org/10.1109/ted.2014.2318611
Autor:
Di Geng, Gregory N. Heiler, Ravi K. Mruthyunjaya, Manju Seok, Dong Han Kang, Mallory Mativenga, Timothy J. Tredwell, Jae Gwang Um, Jin Jang
Publikováno v:
SID Symposium Digest of Technical Papers. 44:1062-1065
When the top-gate and bottom-gate of a dual-gate amorphous-InGaZnO4 (a-IGZO) thin-film transistor (TFT) are electrically tied together (dual-gate driving), drain current (IDS) increases fivefold compared to single-gate driving (i.e. when driving with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fb9298e25845f5ad8cd5ef1ab6ceac
https://doi.org/10.1002/j.2168-0159.2013.tb06407.x
https://doi.org/10.1002/j.2168-0159.2013.tb06407.x
Autor:
Timothy J. Tredwell, Jeff Hsin Chang, Jae Kwang Um, Mallory Mativenga, Gregory N. Heiler, Jin Jang, Ravi K. Mruthyunjaya, Dong Han Kang
Publikováno v:
IEEE Transactions on Electron Devices. 59:2501-2506
For thin-film transistor (TFT) characterization and simulation, accurate knowledge of the effective channel width ( $W_{\rm EFF}$ ) and effective channel length ( $L_{\rm EFF}$ ) is required, particularly in narrow and/or short devices, where small d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e331b8d3f67789c7c65988450ff7f0
https://doi.org/10.1109/ted.2012.2205258
https://doi.org/10.1109/ted.2012.2205258
Autor:
Ravi K. Mruthyunjaya, Seung Hyun Park, Jae Won Choi, Eric J. Mozdy, Mallory Mativenga, Carlo Kosik Williams, Jang Jin, Timothy J. Tredwell, Won Jae Choi, Min Hyuk Choi
Publikováno v:
ECS Transactions. 33:391-398
Low voltage driven inverter, ring oscillator and shift registor circuits using n- and p- channel TFTs based on Corning® Siliconon-Glass (SiOG) substrates are studied. The field effect mobility of n- and p-channel TFTs fabricated in SiOG are 226 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64a5d04433606e13348628861755f2d
https://doi.org/10.1149/1.3481262
https://doi.org/10.1149/1.3481262
Autor:
Eric J. Mozdy, Carlo Kosik Williams, Jae Won Choi, Ravi K. Mruthyunjaya, Timothy J. Tredwell, Mallory Mativenga, Jin Jang, Won Jae Choi, Min Hyuk Choi
Publikováno v:
ECS Transactions. 33:83-94
Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc0ab803bebab22294f635e44edd6d0
https://doi.org/10.1149/1.3481222
https://doi.org/10.1149/1.3481222
Autor:
Gregory N. Heiler, Jae Gwang Um, Timothy J. Tredwell, Md. Masum Billah, Delwar Hossain Chowdhury, Jin Jang, Mallory Mativenga, Ravi K. Mruthyunjaya
Publikováno v:
IEEE Electron Device Letters. :1-1
We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). Wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8416b5f724a4590bc7b15a63cc792128
https://doi.org/10.1109/led.2016.2557358
https://doi.org/10.1109/led.2016.2557358