Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Ravi K. Bonam"'
Autor:
Kamal K. Sikka, Hiroyuki Mori, Hongqing Zhang, Ravi K. Bonam, Risa Miyazawa, Keiji Matsumoto, Marc A. Bergendahl, Takashi Hisada, Aakrati Jain, Dario L. Goldfarb, Dishit P. Parekh, Ed Cropp, Saraf Iqbal Rashid
Publikováno v:
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
In a previous study [1], the authors have investigated stacked silicon microcoolers and quantified their thermal performance envelope in a separable format where the microcooler is attached to an electronic package lid with an intervening TIM2. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c443acf3198537049b6a613d530acf
https://doi.org/10.1109/itherm51669.2021.9503180
https://doi.org/10.1109/itherm51669.2021.9503180
Autor:
Maryse Cournoyer, Hiroyuki Mori, Ravi K. Bonam, Marc A. Bergendahl, Paul S. Andry, Dishit P. Parekh, Isabel de Sousa, Kamal K. Sikka, Aakrati Jain, Pascale Gagnon, Rama Divakaruni, Thomas A. Wassick, Ed Cropp, Hongqing Zhang, Yang Liu, Sayuri Kohara, Catherine Dufort
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
We introduce a new packaging technology termed as Direct Bonded Heterogeneous Integration (DBHi) where a Si-bridge is directly bonded to and in between processor chips using Cu pillars, allowing high-bandwidth low-latency low-power communication betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::960ccc6b8b26dfdd3b11d507ce84411f
https://doi.org/10.1109/ectc32696.2021.00034
https://doi.org/10.1109/ectc32696.2021.00034
Autor:
Mary Breton, Anuja DeSilva, Karen Petrillo, Ravi K. Bonam, Eric R. Miller, Brad Austin, Martin Burkhardt, Shravan Matham, Chris A. Mack, Luciana Meli, Nelson Felix, Romain Lallement, Jing Guo, Jennifer Church
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
With aggressive scaling of single-expose EUV lithography to the sub-7 nm node, stochastic variations play a prominent role in defining the lithographic process window. Fluctuations in photon shot noise, absorption and subsequent chemical reactions ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76be2bd49dc28b190f8b58f3d7bf8a72
https://doi.org/10.1117/12.2551487
https://doi.org/10.1117/12.2551487
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:402-409
The ability to rapidly detect both printable EUV mask adder defects as well as mask absorber defects across the entire mask image field is a key enabler for EUV lithography. Current optical wafer-based inspection techniques are only capable of detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4b45ecfde3018f5c52dc572f0e52f4
https://doi.org/10.1109/tsm.2017.2759759
https://doi.org/10.1109/tsm.2017.2759759
Autor:
Joe Zou, Charles L. Reynolds, Charles Woychik, Thomas A. Wassick, Ravi K. Bonam, Cindy Han, Jason Lee Frankel, Masahiro Tsuriya, Glenn A. Pomerantz, Feng Xue
Publikováno v:
2019 International Conference on Electronics Packaging (ICEP).
The demand for integrated silicon packages is driving packaging advancements for increasingly fine circuit pattern designs. Due to the thinner copper and finer features required for advanced packaging, copper line defects can significantly impact yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b90e55c183466c794ca04502c1dd80f2
https://doi.org/10.23919/icep.2019.8733543
https://doi.org/10.23919/icep.2019.8733543
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Defects are ubiquitous in the semiconductor industry and detection, classification at various levels is a challenge and requires rigorous sampling. Every technology offers a new challenge in this area and requires numerous hours of setup, debug time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d4e888eec4f8e7bf114d7a955d3d2bb
https://doi.org/10.1117/12.2515065
https://doi.org/10.1117/12.2515065
Autor:
Luciana Meli, Ravi K. Bonam, Henry Kamberian, Chris Progler, Bryan S. Kasprowicz, Michael Green, Young Ham, Nelson Felix, Yohan Choi, Daniel Corliss, Mohamed Ramadan, Derren N. Dunn
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet lithography (EUVL) is entering an industry production phase for 7nm logic and is under development for next node logic and memory applications. A key benefit of EUVL for logic interconnect lithography comes from the ability to pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8df3902f7e52aad97585c9637c9ea6
https://doi.org/10.1117/12.2515071
https://doi.org/10.1117/12.2515071
Autor:
Jennifer Church, Karen Petrillo, Chris A. Mack, Brad Austin, Ravi K. Bonam, Eric R. Miller, Anuja De Silva, Nelson Felix, Luciana Meli, Martin Burkhardt, Romain Lallement, Jing Guo, Mary Breton, Shravan Matham
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 19:1
Background: With aggressive scaling of single-expose (SE) extreme ultraviolet (EUV) lithography to the sub-7-nm node, stochastic variations play a prominent role in defining the lithographic process window (PW). Fluctuations in photon shot noise, abs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef9be9328f1c0c85d71bd09d240f0373
https://doi.org/10.1117/1.jmm.19.3.034001
https://doi.org/10.1117/1.jmm.19.3.034001
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 19:1
Defects in semiconductor processes can limit yield, increase overall production cost, and also lead to time-dependent critical component failures. Current state-of-the-art optical and electron beam (EB) inspection systems rely on rule-based technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66f4a7f69083de5c3d774025880ca90
https://doi.org/10.1117/1.jmm.19.2.024801
https://doi.org/10.1117/1.jmm.19.2.024801
Autor:
Stuart A. Sieg, Ravi K. Bonam, Nicole Saulnier, Chi-Chun Liu, Raghuveer R. Patlolla, Mary Breton, Jeffrey C. Shearer, Huai Huang, Raja Muthinti, Indira Seshadri
Publikováno v:
SPIE Proceedings.
Metrology of nanoscale patterns poses multiple challenges that range from measurement noise, metrology errors, probe size etc. Optical Metrology has gained a lot of significance in the semiconductor industry due to its fast turn around and reliable a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62fa53a003f29db9d59f37edeb8fba94
https://doi.org/10.1117/12.2258196
https://doi.org/10.1117/12.2258196