Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ravi Achanta"'
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Sameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan, Wen Liu, Ravi Achanta, Erdem Kaltalioglu, Stephen Moss, Greg Freeman, Paul Colestock
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::805a95f9089595588390109f55e90059
https://hdl.handle.net/2078.1/262709
https://hdl.handle.net/2078.1/262709
A Charge Transport Model for SiCOH Dielectric Breakdown in Copper Interconnects and Its Applications
Autor:
P. McLaughlin, Ravi Achanta
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:133-138
A charge transport model has been applied to predict dielectric breakdown in copper interconnects. The model very accurately predicts the lifetimes of dense and porous dielectrics over long periods. The predictions of the model significantly vary fro
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:273-277
In this paper, the dielectric properties [dielectric constant κ and thickness d (in nanometers)] that are necessary for the reliable operation of interline dielectrics used for passivation of copper interconnects in integrated circuits are determine
Publikováno v:
Journal of Materials Science: Materials in Electronics. 23:48-55
Copper solubility in low-k dielectrics has been shown to be a major factor in decreasing the useful lifetime of an interconnect. A number of groups have shown experimentally that increased surface oxygen concentration, increased moisture content in t
Publikováno v:
Thin Solid Films. 517:5630-5633
In this article we study the effect of metallic barriers in inhibiting copper ion drift/diffusion into low-k dielectrics through a mathematical analysis. We extend our previous drift/diffusion model for copper ion drift without barriers to include th
Publikováno v:
2014 IEEE International Electron Devices Meeting.
We report a wide range of experimental observations of multiple breakdown (BD) phenomena in BEOL/FEOL/MOL dielectric systems with large variability (non-uniformity). Newly developed successive breakdown theory of time-dependent clustering model can w
Publikováno v:
Journal of Non-Crystalline Solids. 350:336-344
The presence of -OH groups increases the dielectric constant of mesoporous silica films making them less suitable as interlayer dielectrics. To reduce the concentration of -OH groups a sintering process was used. The films were prepared by a spin-on,
Autor:
Ramachandran Muralidhar, Martin Z. Bazant, Philip J. Oldiges, Daniel C. Edelstein, Griselda Bonilla, Ravi Achanta, Timothy M. Shaw, F. Chen, Stephan A. Cohen
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
TDDB lifetime projections at operating voltages for backend of line (BEOL) dielectrics have been based on accelerated testing at high fields and extrapolation to operating conditions based on electric field dependent dielectric wearout models. As ope
Publikováno v:
IEEE International Interconnect Technology Conference.
Recently, a time-dependent clustering model has been reported showing good agreement with multiple sets of experimental TDDB data by proper consideration of the percentile scaling of different areas (vertical translation in the Weibull scale) [1,2].