Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Ravesi, S."'
Autor:
Scidà, A., Haque, S., Treossi, E., Robinson, A., Smerzi, S., Ravesi, S., Borini, S., Palermo, V.
Publikováno v:
In Materials Today April 2018 21(3):223-230
Publikováno v:
In Microelectronic Engineering 2002 64(1):151-156
Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films
Publikováno v:
In Microelectronic Engineering 2002 60(1):81-87
Publikováno v:
In Solid State Electronics 1999 43(6):1039-1044
Autor:
Summonte, 2. C., Centurioni, E., Desalvo, A., Canino, M., Mirabella, Salvatore, Agosta, R., Simone, F., Terrasi, Antonio, Di Stefano, M. A., Di Marco, S., Ravesi, S., Lombardo, S.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4731::f9ee4203f17a68f668d112a49ec08e66
http://hdl.handle.net/20.500.11769/75960
http://hdl.handle.net/20.500.11769/75960
Autor:
Summonte, C., Centurioni, E., Desalvo, A., Canino, M., Mirabella, S., Agosta, R., Simone, F., Terrasi, A., Di Stefano, M.A., Di Marco, S., Ravesi, S., Lombardo, S.
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 317-321
The optical properties of silicon nanodots embedded in a dielectric matrix are studied. A critical review of the existing literature is presented
The optical properties of silicon nanodots embedded in a dielectric matrix are studied. A critical review of the existing literature is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83a6fad8fe3958857ab50bd28d16ca6
Autor:
Caristia L., Nicotra G., Bongiorno., Costa N., Ravesi S., Coffa S., De Bastiani R., Grimaldi., MG., Spinella C.
Publikováno v:
Microelectronics and reliability 47 (2007): 777–780. doi:10.1016/j.microrel.2007.01.056
info:cnr-pdr/source/autori:Caristia L.; Nicotra G.; Bongiorno.; C.; Costa N.; Ravesi S.; Coffa S.; De Bastiani R.; Grimaldi.; MG.; Spinella C./titolo:The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers/doi:10.1016%2Fj.microrel.2007.01.056/rivista:Microelectronics and reliability/anno:2007/pagina_da:777/pagina_a:780/intervallo_pagine:777–780/volume:47
info:cnr-pdr/source/autori:Caristia L.; Nicotra G.; Bongiorno.; C.; Costa N.; Ravesi S.; Coffa S.; De Bastiani R.; Grimaldi.; MG.; Spinella C./titolo:The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers/doi:10.1016%2Fj.microrel.2007.01.056/rivista:Microelectronics and reliability/anno:2007/pagina_da:777/pagina_a:780/intervallo_pagine:777–780/volume:47
This work reports the study concerning the influence of the preparation conditions on the structure of silicon rich oxide (SRO) deposited by PECVD method by which the structural properties of the film are strictly related. In particular we investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8981cf053e07a18e8a2f504f0ed77cd
https://publications.cnr.it/doc/36034
https://publications.cnr.it/doc/36034
Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films
Publikováno v:
Microelectronic engineering 60 (2002): 81–87.
info:cnr-pdr/source/autori:Alberti A., Molinaro S., La Via F., Bongiorno C., Ceriola G., Ravesi S./titolo:Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films/doi:/rivista:Microelectronic engineering/anno:2002/pagina_da:81/pagina_a:87/intervallo_pagine:81–87/volume:60
info:cnr-pdr/source/autori:Alberti A., Molinaro S., La Via F., Bongiorno C., Ceriola G., Ravesi S./titolo:Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films/doi:/rivista:Microelectronic engineering/anno:2002/pagina_da:81/pagina_a:87/intervallo_pagine:81–87/volume:60
TiN layers have been used as diffusion barriers to prevent intermixing of aluminium and silicon. During TiN deposition on Ti by reactive sputtering, oxygen has been introduced in-situ into the barrier. Depending on the oxygen flow, a different conten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::27a6375a9ce52a5863b7b621257a199c
http://www.cnr.it/prodotto/i/222281
http://www.cnr.it/prodotto/i/222281