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We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance is evaluated in terms of mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=sharePrprorg::6a151c313d128eaa493359fe89e3ba0d
Publikováno v:
Condensed Matter; Jun2021, Vol. 6 Issue 2, p1-9, 9p