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Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

Autor: Mei, D. -M., Panth, R., Kooi, K., Mei, H., Bhattarai, S., Raut, M., Acharya, P., Wang, G. -J.

By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detect

Externí odkaz: http://arxiv.org/abs/2203.15904

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Low-Energy Solar Neutrino Detection Utilizing Advanced Germanium Detectors

Autor: Bhattarai, S., Mei, D. -M., Raut, M. -S.

We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by t

Externí odkaz: http://arxiv.org/abs/2104.14352

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Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

Autor: Panth, R., Wei, W. -Z., Mei, D. -M., Liu, J., Bhattarai, S., Mei, H., Raut, M., Acharya, P., Kooi, K., Wang, G. -J.

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts depo

Externí odkaz: http://arxiv.org/abs/2101.09322

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Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors

Autor: Raut, M. -S., Mei, H., Mei, D. -M., Bhattarai, S., Wei, W. -Z., Panda, R., Acharya, P., Wang, G. -J.

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the

Externí odkaz: http://arxiv.org/abs/2002.07706

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Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors

Autor: Bhattarai, S., Panth, R., Wei, W. -Z., Mei, H., Mei, D. -M., Raut, M. S., Acharya, P., Wang, W. -J.

Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined us

Externí odkaz: http://arxiv.org/abs/2002.07707

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Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches

Autor: Mei, D. -M., Mukund, R. B, Wei, W. -Z., Panth, R., Liu, J., Mei, H., Li, Y. -Y., Acharya, P., Bhattarai, S., Kooi, K., Raut, M-S., Sun, X. -S., Kirkvold, A., Dong, K. -M., Meng, X. -H., Wang, G. -J., Yang, G.

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizi

Externí odkaz: http://arxiv.org/abs/1909.05806

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