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of 22
pro vyhledávání: '"Rauschenbach, Bernd (Prof.)"'
Autor:
Rauschenbach, Bernd (Prof.)
Orientation dependent sputter yield of aluminium / B. Rauschenbach ... – In: Surface and coatings technology. 151/152. 2002. S. 72-75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::ad83cd090fdf9b446e7c19fcef704485
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31887
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31887
Surface mdification of mdical titanium iplants with PIII / B. Rauschenbach ... - In: Micro- and nanostructures of biological systems / Gerlinde Bischoff ... - Aachen : Shaker-Verl., 2001. – S. 121-134. – (Berichte aus der Biologie)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::6a852aee9a5dfb5b501e6d8ab78624fe
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31891
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31891
Autor:
Rauschenbach, Bernd (Prof.)
Distribution of ion implanted dopants in Gallium Nitride / A. Wenzel, H. Karl, B. Rauschenbach. – In: Ion implantation technology 2000 / ed.: Heiner Ryssel ... - Piscataway, NJ : Inst. of Electrical and Electronics Engineers, 2000. – S. 99-102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::59e3d15df606039cec0aeeadff0cc89d
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31892
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31892
Autor:
Rauschenbach, Bernd (Prof.)
Raman study of Titanium oxide layers produced with plasma immersion ion implantation / B. Rauschenbach ... – In: Surface and coatings technology. 125. 2000. S. 84-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::01050ca2d3032bd9c8eaa3e67ce24b43
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31893
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31893
Autor:
Rauschenbach, Bernd (Prof.)
Damage buildup and removal in Ca-ion-implanted GaN / B. Rauschenbach ... – In: Applied physics. A. 70. 2000. S. 53-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::f4b486f97f6f974ec53aeacf3df4234e
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31898
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/31898
Autor:
Rauschenbach, Bernd (Prof.)
Incorporation of nitrogen into carbon films produced by PECVD under bias voltage / B. Rauschenbach ... - In: Diamond and related materials. 7. 1998. S. 899-902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::7567e4d3bcdd308c994298a24d7d488b
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25934
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25934
Autor:
Rauschenbach, Bernd (Prof.)
Numerical modelling of the plasma source ion implantation process in 2D / B. Rauschenbach ... - In: Computational techniques and applications / ed. by John Noye ... - Singapore : World Scientific, 1998. - S. 663-670
Externí odkaz:
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https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25944
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25944
Autor:
Rauschenbach, Bernd (Prof.)
Herstellung und Abbildung von SiC-Schichten auf Silizium / B. Rauschenbach ... - In: Beiträge zur elektronenmikroskopischen Direktabbildung und Analyse von Oberflächen. 29. 1996. S. 87-90
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https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23639
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23639
Autor:
Rauschenbach, Bernd (Prof.)
Analysis of crystallographic textures in small sample areas. - In: Textures and microstructures. 26/27. 1996. S. 111-124
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https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23536
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23536
Autor:
Rauschenbach, Bernd (Prof.)
Study of the initial growth phase of chemical vapor deposited diamond on silicon (001) by synchrotron radiation / B. Rauschenbach ... - In: Journal of applied physics. 79. 1996. S. 1907-1910
Externí odkaz:
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https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23061
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/23061