Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Raul E. Acosta"'
Publikováno v:
Microelectronic Engineering. 17:189-192
The stress of gold electrodeposited on membranes of Si, SiC, SiN, and BN was measured using a high precision resonant frequency technique. Measurements were made at room temperature (RT) and between 20 and 350 °C. After annealing, the RT stress was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ae459b509679174c45965a15990714
https://doi.org/10.1016/0167-9317(92)90039-t
https://doi.org/10.1016/0167-9317(92)90039-t
Autor:
Raul E. Acosta
Publikováno v:
Microelectronic Engineering. 13:259-262
During use X-ray masks will receive very large accumulated doses, perhaps as high as 0.5 MJ/cm 2 . Because the allowed mask distortion for 0.25 μm ground rules is of the order of 0.075 μm, the permissible radiation-induced distortion is ⋍ 0.025
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8229cb0b86db33156f3c6b2515f35ea
https://doi.org/10.1016/0167-9317(91)90088-u
https://doi.org/10.1016/0167-9317(91)90088-u
Publikováno v:
IEEE International Symposium on Circuits and Systems.
The fracture behavior of metal-polymer line structures as a function of dimensions was investigated using a stretch-deformation technique. The effects of line orientation, line width, and film thickness are reported. When the line orientation is para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f32098999ae25fcbd223c3ecbb749ee7
https://doi.org/10.1109/iscas.1990.112217
https://doi.org/10.1109/iscas.1990.112217
Autor:
Jennifer L. Lund, Raul E. Acosta, Lili Deligianni, Christopher V. Jahnes, Arpan P. Mahorowala, Joanna Rosner, David E. Seeger, Inna V. Babich, John M. Cotte, Paivikki Buchwalter, Panayotis C. Andricacos
Publikováno v:
Emerging Lithographic Technologies VI.
With wireless communications becoming an important technology and growth engine for the semiconductor industry, many semiconductor companies are developing technologies that differentiate themselves in this space. One means of accomplishing this goal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f023e1109d727d3fb3554b2b75859711
https://doi.org/10.1117/12.472298
https://doi.org/10.1117/12.472298
Autor:
Juan R. Maldonado, Raul E. Acosta, Fuad E. Doany, Marie Angelopoulos, Jeffrey A. Leavey, Steven A. Cordes, C. Waskiewicz
Publikováno v:
SPIE Proceedings.
The feasibility of using thin films of organic material as a protective cover for x-ray lithography masks has been demonstrated. A pellicle structure that fits unobtrusively inside the mask-wafer gap and on the x-ray lithography NIST standard ring wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a61feac49275af04b8464064ca455b
https://doi.org/10.1117/12.309611
https://doi.org/10.1117/12.309611
Publikováno v:
SPIE Proceedings.
Micromachining using Deep Etch Lithography (the LIGA process) has been the subject of intensive research since the 1980's. Efforts are underway to produce a wide variety of microstructure products, from fuel injectors in the automobile industry to mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d658eb9378cc1226047b29858f4413
https://doi.org/10.1117/12.209192
https://doi.org/10.1117/12.209192
Autor:
Arpan P. Mahorowala, Panayotis C. Andricacos, Inna V. Babich, Jennifer L. Lund, John M. Cotte, Christopher V. Jahnes, Raul E. Acosta, Joanna Rosner, Lili Deligianni, David E. Seeger, Paivikki Buchwalter
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 2:169
With wireless communications becoming an important technology and growth engine for the semiconductor industry, many semiconductor companies are developing technologies to differentiate themselves in this area. One means of accomplishing this goal is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c977a1ec5d70bc1548b447dafac771e0
https://doi.org/10.1117/1.1586707
https://doi.org/10.1117/1.1586707
Autor:
W. C. Pritchet, Raul E. Acosta, D. J. Resnick, B. S. Berry, William J. Dauksher, W. A. Johnson
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:3155
A resonance frequency measurement technique has been used to measure the stress at temperature of plated gold films on x‐ray mask membranes over the temperature range of 90–525 K. Room temperature tensile stress increases are observed after above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1017477c16c488004c4b958d68f2d502
https://doi.org/10.1116/1.585902
https://doi.org/10.1116/1.585902
Autor:
H. Voelker, R. Viswanathan, D. Crockatt, David E. Seeger, Raul E. Acosta, John Michael Warlaumont, Robert H. Fair, Juan R. Maldonado, O. Vladirmirsky, Inna V. Babich, A. D. Wilson, F. J. Hohn
Publikováno v:
Microelectronic Engineering. 9:93-96
Full sets (8 levels each) of X-ray masks have been made and characterized for overlay, resolution and line- width control. These mask sets have been successfully used to fabricate fully scaled 0.5 μm MOS circuits. The mask absorber included, in addi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27752ac5a7c5d17bf4c197a6867cae83
https://doi.org/10.1016/0167-9317(89)90021-x
https://doi.org/10.1016/0167-9317(89)90021-x
Publikováno v:
Microelectronic Engineering. 3:615-621
Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7766a89e55e3fccf4bedac1836724fcb
https://doi.org/10.1016/0167-9317(85)90076-0
https://doi.org/10.1016/0167-9317(85)90076-0