Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Rauf A. Suleymanov"'
Publikováno v:
Semiconductors. 52:2007-2016
The influence of electric field and current flow on the current–voltage (I–V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I–V characteristics assoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac3edbc8229ac418612303b633c168a
https://doi.org/10.1134/s1063782618160273
https://doi.org/10.1134/s1063782618160273
Autor:
Rauf A. Suleymanov, G. M. Sharifov, T. G. Mammadov, MirHasan Yu. Seyidov, V. B. Aliyeva, Faik A. Mikailzade
Publikováno v:
Physica B: Condensed Matter. 526:45-53
Dielectric hysteresis loops of pure and lanthanum doped TlInS2 ferroelectric-semiconductors were studied at the frequency 50 Hz for different temperatures below the Curie temperature ( T c ). It has been revealed that, without any poling procedure, p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855eba094358bf896c0951f897d54adc
https://doi.org/10.1016/j.physb.2017.07.003
https://doi.org/10.1016/j.physb.2017.07.003
Publikováno v:
Physica B: Condensed Matter. 497:86-92
We have investigated p-type semiconductor–ferroelectric TlInS2 by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS2. Five native deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1965c3485c1bef35d8d26d47ff51af60
https://doi.org/10.1016/j.physb.2016.06.010
https://doi.org/10.1016/j.physb.2016.06.010
Publikováno v:
Journal of Physics and Chemistry of Solids. :17-21
In this work, we present the results of optical experiments designed to investigate the changes in optical absorption spectra of TlGaSe2 ferroelectric-semiconductor with incommensurate (INC) phase in experimental conditions where crystal is kept seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb398e9ec1e8a96cbd0c616b0a348bb
https://doi.org/10.1016/j.jpcs.2016.04.009
https://doi.org/10.1016/j.jpcs.2016.04.009
Publikováno v:
Journal of Physics and Chemistry of Solids. 93:22-26
The effect of uniaxial stress on dielectric properties of sodium nitrite (NaNO 2 ) ferroelectric has been investigated. The real part of the dielectric susceptibility was measured at the frequency of 1 kHz without and on applying compressive uniaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e6b9b0920f98e83f1d53b2a5a6391a
https://doi.org/10.1016/j.jpcs.2016.02.004
https://doi.org/10.1016/j.jpcs.2016.02.004
Publikováno v:
Physics of the Solid State. 58:716-722
This paper reports on the results of the investigation of electrically active defects in the crystal structure in a layered ferroelectric–semiconductor TlInS2: La crystal by photoinduced current transient spectroscopy (PICTS). It has been found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60251798320bf4b9f69c2ff9c11f099
https://doi.org/10.1134/s1063783416040156
https://doi.org/10.1134/s1063783416040156
Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric–Semiconductor
Publikováno v:
Ferroelectrics. 481:77-88
In this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2 ferroelectric – semiconductor with incommensurate (INC) - phase are presented. The aim is to show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0691a02ceb06eb2290fc7d0de2dbaefe
https://doi.org/10.1080/00150193.2015.1049505
https://doi.org/10.1080/00150193.2015.1049505
Autor:
V. B. Alieva, T. G. Mammadov, M. H. Yu. Seyidov, A. P. Odrinskii, E. Acar, Rauf A. Suleymanov
Publikováno v:
Physics of the Solid State. 56:2028-2034
The results of investigations of the pyroelectric current in a layered TlInS2 crystal doped with lanthanum are presented. A comparative analysis of the obtained results and data of photo-induced current transient spectroscopy has been performed. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd7693588f9b0b0262c3b454e5866dd6
https://doi.org/10.1134/s1063783414100254
https://doi.org/10.1134/s1063783414100254
Autor:
T. G. Mammadov, MirHasan Yu. Seyidov, Elif Acar, Andrei P. Odrinsky, V. B. Aliyeva, A. I. Nadjafov, Rauf A. Suleymanov
Publikováno v:
Low Temperature Physics. 40:830-836
Photoelectric relaxation spectroscopy (photoinduced current relaxation spectroscopy, PICTS) is used to study pure and La-doped single crystals of TlInS2. The characteristics of electrically active defects are determined including the capture cross se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f1d6f70f102323ac58cc7f20b576d2
https://doi.org/10.1063/1.4896726
https://doi.org/10.1063/1.4896726
Publikováno v:
Solid State Sciences. 33:49-52
The effect of the preillumination on the dark and the photo-conductivity of the TlGaSe2 layered semiconductor is investigated within the temperature range of 80–300 K. After the illumination predominantly at high temperatures, a substantial decreas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238f1d1ce13f7b8735d0c209588252ab
https://doi.org/10.1016/j.solidstatesciences.2014.04.009
https://doi.org/10.1016/j.solidstatesciences.2014.04.009