Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with 'ribbon' gate and source contacts layouts

Autor: Fournier, D., Ducatteau, D., Fontaine, Julien, Scheer, P., Bon, O., Rauber, B., Buczko, M., Gloria, D., Gaquière, Christophe, Chevalier, P.

Publikováno v: Proceedings of the 21st International Symposium on Power Semiconductor Devices ans ICs, ISPSD'09
21st International Symposium on Power Semiconductor Devices ans ICs, ISPSD'09
21st International Symposium on Power Semiconductor Devices ans ICs, ISPSD'09, 2009, Spain. pp.116-119, ⟨10.1109/ISPSD.2009.5158015⟩

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a8f55a4b77a572e365d0e002b2d1ec63
https://hal.archives-ouvertes.fr/hal-00474496

Integration of cellular front end modules on advanced high resistivity SOI RF CMOS technology.

Autor: Gianesello, F., Durand, C., Pilard, R., Petit, D., Penard, J., Jan, S., Gloria, D., Rauber, B., Raynaud, C.

Publikováno v: 2011 IEEE Topical Conference on Power Amplifiers for Wireless & Radio Applications (PAWR); 2011, p29-32, 4p

Small-size low losses GSM and DCS harmonic filters integrated in a low cost 130 nm high resistivity SOI CMOS technology.

Autor: Gianesello, F., Durand, C., Bon, O., Gloria, D., Rauber, B., Raynaud, C.

Publikováno v: 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF); 2010, p65-68, 4p

High current 3D symmetrical inductor integrated in an advanced HR SOI CMOS technology targeting RF power applications.

Autor: Gianesello, F., Gloria, D., Bon, O., Rauber, B., Raynaud, C.

Publikováno v: 2009 IEEE Radio Frequency Integrated Circuits Symposium; 2009, p517-520, 4p

New self heating structures for thermal coupling modeling on multi-fingered SOI power devices.

Autor: Hniki, S., Bertrand, G., Morancho, F., Ortolland, S., Minondo, M., Rauber, B., Raynaud, C., Giry, A., Bon, O., Jaouen, H.

Publikováno v: 2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p96-99, 4p