Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ratmir Gelagaev"'
Publikováno v:
IEEE Transactions on Industrial Electronics. 62:1241-1250
For determining the dynamic on-resistance of a power transistor, the voltage and current waveforms have to be measured during the switching operation. The novel heterostructure wide-bandgap (eg. AlGaN/GaN) transistors inherently suffer from the curre
Autor:
Ratmir Gelagaev, Filip Bauwens, Ignacio Castro, Basil Vlachakis, Diego G. Lamar, Johan Driesen, Jaume Roig
Publikováno v:
Scopus
RUO. Repositorio Institucional de la Universidad de Oviedo
instname
RUO. Repositorio Institucional de la Universidad de Oviedo
instname
A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9a106ca94bcf417e29325afe7a4a09e
http://hdl.handle.net/10651/37072
http://hdl.handle.net/10651/37072
Publikováno v:
IECON
The effective efficiency of a photovoltaic system is strongly affected by varying factors such as partial shading. The centralized power conversion has limitations to mitigate that problem. As a possible solution the benefits of the distributed power
Autor:
Wim Symens, Jeroen Zwysen, Johan Driesen, Ratmir Gelagaev, B. Schuyten, Stijn Goossens, K. Vanvlasselaer
Publikováno v:
IECON
A multi-objective design procedure is applied to the design of a close-coupled inductor for a three-phase interleaved 140kW DC-DC converter. For the multi-objective optimization, a genetic algorithm is used in combination with a detailed physical mod
Autor:
Peter Tant, T. Geurts, Johan Driesen, Ratmir Gelagaev, F. Bamelis, Jeroen Zwysen, Kristof Engelen
To adjust the light spectrum of a flash lamp, the current flowing through the flash lamp has to be controlled. An optimal design of a switched resistor bank circuit following a predefined current profile is presented. The optimal values of the switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ded91478824674d01169025d5d543648
https://lirias.kuleuven.be/handle/123456789/469437
https://lirias.kuleuven.be/handle/123456789/469437
Accurately modelling of parasitics in power electronics circuits using an easy RLC-extraction method
A method for accurately modelling parasitics in power electronic circuits, is presented in this paper. The freeware software programs FastCap and FastHenry are used to create a model of the printed circuit board tracks, consisting of resistances, sel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e13ca6bc7c1141b31f6b4e3857dd1910
https://lirias.kuleuven.be/handle/123456789/363468
https://lirias.kuleuven.be/handle/123456789/363468
Publikováno v:
Proceedings of the IEEE International Instrumentation and Measurement Technology Conference (I2MTC 2012), 13-16 May 2012, Graz, Austria, 111-116
STARTPAGE=111;ENDPAGE=116;TITLE=Proceedings of the IEEE International Instrumentation and Measurement Technology Conference (I2MTC 2012), 13-16 May 2012, Graz, Austria
STARTPAGE=111;ENDPAGE=116;TITLE=Proceedings of the IEEE International Instrumentation and Measurement Technology Conference (I2MTC 2012), 13-16 May 2012, Graz, Austria
For determining the dynamic on-resistance R dyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amp
With the upcoming of wide bandgap semiconductors, transistors in power electronics can be used with higher switching frequencies, up to several tens of megahertzes. In the rising and falling edges of the pulse generated by transistors even higher fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37c1b118d3a12f771092e5c271542d04
https://lirias.kuleuven.be/handle/123456789/332096
https://lirias.kuleuven.be/handle/123456789/332096
Publikováno v:
Proceedings of 14th International Conference on Harmonics and Quality of Power - ICHQP 2010.
Observability analysis is a very important tool in state estimation. For a given set of measurements and their geographical location in the system, it determines whether the state of the whole system can be estimated. In this paper a numerical observ
Publikováno v:
Proceedings of the 14th IEEE International Power Electronics and Motion Control Conference (EPE/PEMC 2010), 6-8 September 2010, Ohrid, Republic of Macedonia
Wide-bandgap (WBG) semiconductors, such as gallium nitride (GaN), are more and more being used in switching power devices. An AlGaN/GaN/AlGaN Double Heterojunction Field Effect transistor (DHFET) was developed in previous work and needed to be tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eeeeef1218400b3b52c776abd6858ea
https://research.tue.nl/nl/publications/aef7f560-30ed-4d54-acfd-0e91bfc1552a
https://research.tue.nl/nl/publications/aef7f560-30ed-4d54-acfd-0e91bfc1552a