Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Ratan Debnath"'
Publikováno v:
Sensors, Vol 21, Iss 2, p 624 (2021)
In this work, a TiO2-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO2/GaN chemiresistor is highly s
Externí odkaz:
https://doaj.org/article/f6da118787b14dada7d415b8b37ce1a8
Autor:
Md Rezaul Hasan, Ting Xie, Sara C. Barron, Guannan Liu, Nhan V. Nguyen, Abhishek Motayed, Mulpuri V. Rao, Ratan Debnath
Publikováno v:
APL Materials, Vol 3, Iss 10, Pp 106101-106101-7 (2015)
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction s
Externí odkaz:
https://doaj.org/article/17c6bf86e60a44d28b0a0d603f9e3f27
Autor:
Sergiy Krylyuk, Ratan Debnath, Heayoung P. Yoon, Matthew R. King, Jong-Yoon Ha, Baomei Wen, Abhishek Motayed, Albert V. Davydov
Publikováno v:
APL Materials, Vol 2, Iss 10, Pp 106104-106104-8 (2014)
We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consists of inductively coupled plasma (ICP) etching of lithographically patterned GaN-on-Si substrate to produce an arra
Externí odkaz:
https://doaj.org/article/5a0b0b777497423e870bc806c83dc26d
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:742-747
In this work, sensor die/process and packaging reliabilities of metal-oxide/GaN nanowire-based gas sensors have been studied for the first time, using industry standard accelerated lifetime tests, such as- High Temperature Operating Life, High Temper
Publikováno v:
IEEE Sensors Journal. 20:6020-6028
In this work, a gas sensor array has been designed and developed comprising of Pt, Cu and Ag decorated TiO2 and ZnO functionalized GaN nanowires using industry standard top-down fabrication approach. The receptor metal/metal-oxide combinations within
Publikováno v:
Sensors, Vol 21, Iss 624, p 624 (2021)
Sensors (Basel, Switzerland)
Sensors (Basel, Switzerland)
In this work, a TiO2-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO2/GaN chemiresistor is highly s
Autor:
Asha, Rani, Shiqi, Guo, Sergiy, Krylyuk, Kyle, DiCamillo, Ratan, Debnath, Albert V, Davydov, Mona E, Zaghloul
Publikováno v:
IEEE Trans Electron Devices
Single-crystalline MoSe(2) and MoTe(2) platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickn
Autor:
Md Ashfaque Hossain, Khan, Brian, Thomson, Ratan, Debnath, Asha, Rani, Abhishek, Motayed, Mulpuri V, Rao
Publikováno v:
Nanotechnology. 31(15)
Internet of Things applications require ultra-low power, integrable into electronic circuits and mini-sized chemical sensors for automated remote air quality monitoring system. In this work, a highly sensitive and selective detection of nitrogen diox
Autor:
Baomei Wen, Thomas E. Murphy, Ting Xie, Ratan Debnath, Asha Rani, Audie Castillo, Brian Thomson, Romel D. Gomez, Abhishek Motayed
Publikováno v:
Thin Solid Films. 620:76-81
Thin film oxides have attracted attention in implementations of gas sensors, notably NO 2 , owing to their unique physical, optical, and chemical properties. While the properties are presumed to be strongly dependent on the surface conditions of the
Autor:
Brian Thomson, Jie Yu, Ashfaque Hossain Khan, Abhishek Motayed, Ratan Debnath, Mulpuri V. Rao
Publikováno v:
Sensors and Actuators B: Chemical. 318:128223
In this work, GaN nanowires have been formed on Si substrate using production standard stepper lithography and top-down approach. Three different functionalized devices were prepared by the deposition of metal oxides- ZnO, WO3 and SnO2 by optimized R