Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Rasha H. El-Jaroudi"'
Publikováno v:
Crystal Growth & Design. 22:3753-3759
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca277833dfd487f70d63e7c6ca6b6c6
https://doi.org/10.1021/acs.cgd.2c00131
https://doi.org/10.1021/acs.cgd.2c00131
Publikováno v:
Crystal Growth & Design. 21:6076-6082
The small lattice constants of the boron pnictides present exciting new opportunities for strain engineering and lattice-matching of III–V semiconductor heterostructures. However, the challenging s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f53cf18f7ae3063ce85dea70ae26b70
https://doi.org/10.1021/acs.cgd.1c00291
https://doi.org/10.1021/acs.cgd.1c00291
Autor:
Qian Meng, Rasha H. El-Jaroudi, R. Corey White, Tuhin Dey, M. Shamim Reza, Seth R. Bank, Mark A. Wistey
Publikováno v:
Journal of Applied Physics. 132:193104
Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa(In)As, are typically assumed to be HMAs. BGa(In)As can be grown in hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbd9c2c9edd157c2b0e83ffce1e18865
https://doi.org/10.1063/5.0125109
https://doi.org/10.1063/5.0125109
Publikováno v:
Optical Materials Express. 12:3118
Band gap alignments of BGaInAs/GaAs quantum wells with mole fractions of indium around 40% and mole fractions of boron ranging from 0% up to 4.75% are studied experimentally by photoreflectance (PR) and photoluminescence (PL). Obtained results are ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de05bb7059f284711e7fef7ced1b3b84
https://doi.org/10.1364/ome.461753
https://doi.org/10.1364/ome.461753
Autor:
R C White, Seth R. Bank, W Żuraw, F. Dybala, N Sokołowski, Robert Kudrawiec, Szymon J. Zelewski, Rasha H. El-Jaroudi, K. M. McNicholas, J. Kopaczek
Publikováno v:
Journal of Physics D: Applied Physics. 55:015107
BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance (PR) spectroscopy with both temperature and hydrostatic pressure dependence.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e21a530f3ea62a9b22c14d774f7d2a6
https://doi.org/10.1088/1361-6463/ac2643
https://doi.org/10.1088/1361-6463/ac2643
Autor:
Rasha H. El-Jaroudi, Kyle M. McNicholas, Brent A. Bouslog, Iram E. Olivares, Rachel C. White, Joshua A. McArthur, Seth R. Bank
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccd66aa4349728c9ba14539059029b2
https://doi.org/10.1364/cleo_si.2019.sth4o.7
https://doi.org/10.1364/cleo_si.2019.sth4o.7
Autor:
Scott D. Sifferman, Leland Nordin, Rasha H. El-Jaroudi, Andrew Briggs, Seth R. Bank, K. M. McNicholas
Publikováno v:
Applied Physics Letters. 117:021102
We report the room temperature photoluminescence and electroluminescence properties of boron incorporated into highly strained InGaAs, forming BGaInAs, grown on GaAs substrates. X-ray diffraction was used to determine the alloy composition and strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5d9421b4821838af9efb8ea77ab678
https://doi.org/10.1063/5.0011147
https://doi.org/10.1063/5.0011147
Autor:
J. Shao, Ravindranath Droopad, W. K. Jamison, Seth R. Bank, K. M. McNicholas, Rasha H. El-Jaroudi, G. R. Savich, Ann Kathryn Rockwell, Gary W. Wicks, Terry Golding
Publikováno v:
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
We describe the molecular beam epitaxial growth of BGaAs on GaP, towards the integration of direct bandgap light emitting diodes coherently on silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::260fa9f3ad369d35c22d1980bac862e5
https://doi.org/10.1109/rapid.2018.8508971
https://doi.org/10.1109/rapid.2018.8508971