Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Raseong Kim"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 505-523 (2020)
Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In0.7Ga0.3As, In0.53Ga0.47As, GaAs, and Ge for nMOS, Si and Ge for
Externí odkaz:
https://doaj.org/article/28aacb99356045f68ecdf7812c9e18ab
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 37-43 (2015)
Effects of source/drain (S/D) doping density (NSD) on the ballistic performance of III-V nanowire (NW) n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) are explored through atomistic quantum transport simulation. Different III
Externí odkaz:
https://doaj.org/article/944f29b719d4402bb31f673cfa5a5fc3
Publikováno v:
Physical Review B. 106
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long s
Publikováno v:
IEEE Electron Device Letters. 41:1332-1335
Temperature ( ${T}$ ) effects on MOSFET channel material benchmarking are explored using atomistic quantum and Monte Carlo simulation. Performance metrics such as OFF-current, maximum supply voltage ( ${V} _{\text {DD,max}}$ ), and effective inverter
Publikováno v:
IEEE Transactions on Electron Devices. 66:1189-1196
Comprehensive simulation results are reported for the source/drain (S/D) geometry effects on the drive current of various n-type (Si, In0.53Ga0.47As, Ge) and p-type (Si, Ge) metal–oxide–semiconductor field-effect transistors (MOSFETs). Full-band
Publikováno v:
IEEE Transactions on Electron Devices. 62:713-721
Comprehensive performance benchmarking results for III-V and Si nanowire nMOSFETs (gate length of 13 nm) are reported based on the atomistic full-band ballistic quantum transport simulation including the effects of parasitic resistance and capacitanc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 37-43 (2015)
Effects of source/drain (S/D) doping density (NSD) on the ballistic performance of III-V nanowire (NW) n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) are explored through atomistic quantum transport simulation. Different III
Publikováno v:
IEEE Electron Device Letters. 36:751-753
Through a physics-based model and a numerical simulation, it is revealed that Ge nanowires (NWs) with the $\langle 110\rangle $ transport direction may deliver high intrinsic/ballistic drive currents for scaled nMOSFETs due to the optimum quantum-con
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
As MOSFET scaling continues [1], new n- and p-channel materials are being actively explored to deliver performance targets better than Si. In this paper, we present CMOS performance benchmarking results for Si, InAs, GaAs, and Ge nanowire (NW) n- and
Autor:
Mark Lundstrom, Raseong Kim
Publikováno v:
IEEE Transactions on Electron Devices. 56:132-139
The physics of carrier backscattering in 1-D and 2-D transistors is examined analytically and by numerical simulation. An analytical formula for the backscattering coefficient is derived for elastic scattering in a 1-D channel. This formula shows tha