Zobrazeno 1 - 10
of 949
pro vyhledávání: '"Rappe, Andrew M"'
The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility. However, the micr
Externí odkaz:
http://arxiv.org/abs/2410.18816
Tight-binding models provide great insight and are a low-cost alternative to \emph{ab initio} methods for calculation of a material's electronic structure. These models are used to calculate optical responses, including nonlinear optical effects such
Externí odkaz:
http://arxiv.org/abs/2409.15673
The motion of domain walls is crucial for ferroelectric switching. Conventionally, the switching dynamics is believed to be determined by the motion of one or a few low-energy domain wall types of dominant population. Here, we challenge this conventi
Externí odkaz:
http://arxiv.org/abs/2409.12248
Autor:
Zhu, Menglin, Xu, Michael, Qi, Yubo, Gilgenbach, Colin, Kim, Jieun, Zhang, Jiahao, Denzer, Bridget R., Martin, Lane W., Rappe, Andrew M., LeBeau, James M.
Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypical example, with decades of investigation having connected chemical and
Externí odkaz:
http://arxiv.org/abs/2408.11685
Autor:
Zhou, Songsong, Rappe, Andrew M.
Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to enable easier polarization switching are needed, and the unde
Externí odkaz:
http://arxiv.org/abs/2404.15251
Autor:
Gallop, Nathaniel. P., Maslennikov, Dmitry R., Goetz, Katelyn P., Dai, Zhenbang, Schankler, Aaron M., Sung, Woongmo, Nihonyanagi, Satoshi, Tahara, Tahei, Bodnarchuk, Maryna, Kovalenko, Maksym, Vaynzof, Yana, Rappe, Andrew M., Bakulin, Artem A.
Vibrational control (VC) of photochemistry through the optical stimulation of structural dynamics is a nascent concept only recently demonstrated for model molecules in solution. Extending VC to state-of-the-art materials may lead to new applications
Externí odkaz:
http://arxiv.org/abs/2404.14424
Autor:
Morita, Kazuki, Rappe, Andrew M.
Double perovskites Cs$_2$Au$_2$X$_6$ (X=Cl, Br, I) are prototypical materials that exhibit charge disproportionation of gold into 1+ and 3+ states. It is known that the disproportionation is resolved under high pressures, and this has stimulated many
Externí odkaz:
http://arxiv.org/abs/2404.08465
Autor:
Gallagher, Shaun, Kline, Jessica, Jahanbakhshi, Farzaneh, Sadighian, James C., Lyons, Ian, Shen, Gillian, Rappe, Andrew M., Ginger, David S.
Photoluminescence intermittency remains one of the biggest challenges to realizing perovskite quantum dots (QDs) as scalable single photon emitters. We compare CsPbBr3 QDs capped with different ligands, lecithin, and a combination of oleic acid and o
Externí odkaz:
http://arxiv.org/abs/2404.08166
Autor:
Orenstein, Gal, Krapivin, Viktor, Huang, Yijing, Zhan, Zhuquan, Munoz, Gilberto de la Pena, Duncan, Ryan A., Nguyen, Quynh, Stanton, Jade, Teitelbaum, Samuel, Yavas, Hasan, Sato, Takahiro, Hoffmann, Matthias C., Kramer, Patrick, Zhang, Jiahao, Cavalleri, Andrea, Comin, Riccardo, Dean, Mark P. M., Disa, Ankit S., Forst, Michael, Johnson, Steven L., Mitrano, Matteo, Rappe, Andrew M., Reis, David, Zhu, Diling, Nelson, Keith A., Trigo, Mariano
The nature of the "failed" ferroelectric transition in SrTiO3 has been a long-standing puzzle in condensed matter physics. A compelling explanation is the competition between ferroelectricity and an instability with a mesoscopic modulation of the pol
Externí odkaz:
http://arxiv.org/abs/2403.17203
Autor:
Baksa, Steven M., Gelin, Simon, Oturak, Seda, Spurling, Robert Jackson, Sepehrinezhad, Alireza, Jacques, Leonard, Trolier-McKinstry, Susan E., van Duin, Adri C. T., Maria, Jon-Paul, Rappe, Andrew M., Dabo, Ismaila
Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thi
Externí odkaz:
http://arxiv.org/abs/2311.05413