Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Raphael Sommet"'
Autor:
Mohamed Bouslama, P. Vigneshwara Raja, Florent Gaillard, Raphael Sommet, Jean-Christophe Nallatamby
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125316-125316-10 (2021)
The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations. The DCT characterization reveal
Externí odkaz:
https://doaj.org/article/40749fba69e64349a9f33de982c15a62
Autor:
Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raphael Sommet, Raymond Quere
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 175-181 (2017)
In this paper, the type, activation energy (Ea) and cross section (σn) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements. Furthermore, we presen
Externí odkaz:
https://doaj.org/article/c80584ab11bd4dc78de9588d7b25705a
Autor:
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean-Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1957-1966
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ce4f5bb805729ad9e4764c0b0a744d
https://doi.org/10.1109/tmtt.2022.3222190
https://doi.org/10.1109/tmtt.2022.3222190
Autor:
P. Vigneshwara Raja, Emmanuel Dupouy, Mohamed Bouslama, Raphael Sommet, Jean-Christophe Nallatamby
Publikováno v:
IEEE Transactions on Electron Devices. 69:4864-4869
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691cde2d21adcdb109c29f3bf7415165
https://doi.org/10.1109/ted.2022.3193650
https://doi.org/10.1109/ted.2022.3193650
Autor:
P. Vigneshwara Raja, Jean-Christophe Nallatamby, Mohamed Bouslama, Jean Claude Jacquet, Raphael Sommet, Christophe Chang, Benoit Lambert
Publikováno v:
2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5621ee5f001c000d5597c550c83a77b9
https://doi.org/10.1109/nemo51452.2022.10038964
https://doi.org/10.1109/nemo51452.2022.10038964
Publikováno v:
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9842ba6bab164327666f2396ddc3900
https://doi.org/10.1109/eurosime54907.2022.9758888
https://doi.org/10.1109/eurosime54907.2022.9758888
Autor:
Emmanuel Dupouy, P. Vigneshwara Raja, Florent Gaillard, Raphael Sommet, Jean-Christophe Nallatamby
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6008f019fa04267e119f0d4082d25479
https://doi.org/10.23919/eumic50153.2022.9783939
https://doi.org/10.23919/eumic50153.2022.9783939
Autor:
Jean-Christophe Nallatamby, Jose Anderson Silva Dos Santos, P. Vigneshwara Raja, Mohamed Bouslama, Raphael Sommet
In this paper, the trap signatures located at the GaN cap/SiN interface and in the GaN buffer are clearly identified in the Fe-doped AlGaN/GaN HEMT device by means of low frequency (LF) S-parameter characteristics. For that, LF Sparameter TCAD Sentau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5e16c2757f52f48d1583f3fd0f5c9b3
https://hal.science/hal-03812830
https://hal.science/hal-03812830
Publikováno v:
Electronics, Vol 10, Iss 3138, p 3138 (2021)
Electronics; Volume 10; Issue 24; Pages: 3138
Electronics
Electronics, MDPI, 2021, 10 (24), pp.3138. ⟨10.3390/electronics10243138⟩
Electronics; Volume 10; Issue 24; Pages: 3138
Electronics
Electronics, MDPI, 2021, 10 (24), pp.3138. ⟨10.3390/electronics10243138⟩
International audience; This paper described a comparison between a numerical Finite Element Analysis (FEA) and an analytical approach in order to extract the thermal time constants and the thermal resistances of simple but realistic structures. Unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59ef2cdb609e8fa5e9065cf2e2d810ce
https://www.mdpi.com/2079-9292/10/24/3138
https://www.mdpi.com/2079-9292/10/24/3138
Autor:
Mohamed Bouslama, Ahmad Al Hajjar, Raphael Sommet, Farid Medjdoub, Jean-Christophe Nallatamby
Publikováno v:
2018 48th European Microwave Conference (EuMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7d2d40af724f9f2dc99be2ec08657e
https://doi.org/10.23919/eumc.2018.8541541
https://doi.org/10.23919/eumc.2018.8541541