Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Raphael J. Prentki"'
Autor:
Guodong Qi, Jiali Huo, Ye Lu, Fei Liu, Qingzhu Zhang, Zhenhua Wu, Kun Luo, Weixing Huang, Raphael J. Prentki, Jianhui Bu, Huaxiang Yin, Hong Guo, Weizhuo Gan
Publikováno v:
IEEE Transactions on Electron Devices. 68:5455-5461
Source engineering is an emerging technique to achieve steep-slope switching FET. To bridge the new carrier filtering mechanism and device performance, a multiscale simulation framework is presented in this article and is applied in Si nanowire (NW)
Autor:
Raphael J. Prentki
Publikováno v:
IEEE Transactions on Electron Devices. 68:4625-4629
Semiconductor doping is limited by such practical concerns as bandgap narrowing and solid solubility limits of dopants. Bound-charge engineering (BCE) bypasses these limits by doping with surface bound charge located on the interface between a semico
Publikováno v:
IEEE Transactions on Electron Devices. 68:911-918
The subthreshold swing (SS) of a field-effect transistor (FET) is given by the body factor multiplied by the transport factor and has a limit of $60\text{ mV} \cdot ^{-1}$ at room temperature in the case of the MOSFET. To break this SS limit, the neg
Autor:
Tianchun Ye, Jianhui Bu, Fei Liu, Qingzhu Zhang, Weizhuo Gan, Hong Guo, Huaxiang Yin, Kun Luo, Raphael J. Prentki, Zhenhua Wu, Huilong Zhu, Wenwu Wang
Publikováno v:
IEEE Transactions on Electron Devices. 67:2243-2248
The cold source field-effect transistor (CSFET), enabled by novel source engineering, is a promising alternative to achieve sub-60 mV/dec steep-slope switching. For the first time, we develop an industry-standard TCAD approach for the CSFET with an e
Publikováno v:
IEEE Transactions on Electron Devices. 66:3668-3674
In this paper, we present two accurate physics-based models of ballistic metal–oxide–semiconductor field-effect transistors (MOSFETs), both using less than ten parameters. These models—the capacitor model and the virtual source model—are base
Autor:
Huaxiang Yin, Jianhui Bu, Kun Luo, Raphael J. Prentki, Weixing Huang, Jiali Huo, Zhenhua Wu, Hong Guo, Ronggen Cao, Ye Lu, Qiang Huo, Weizhuo Gan
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
With novel energy-filtering switching mechanism enabled by broken-gap-like source engineering, steep slope and high on-state current can be obtained in cold source FET (CSFET). In order to account for the energy-filtering mechanism, effective cold ca
Publikováno v:
Physical Review Letters. 125
Low-dimensional electronic systems such as silicon nanowires exhibit weak screening which is detrimental to the performance and scalability of nanodevices, e.g., tunnel field-effect transistors. By atomistic quantum transport simulations, we show how
Autor:
Fei Liu, Tianchun Ye, Huaxiang Yin, Qingzhu Zhang, Wenwu Wang, Zhenhua Wu, Weizhuo Gan, Huilong Zhu, Hong Guo, Jianhui Bu, Raphael J. Prentki
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Cold Source Field Effect Transistor (CSFET) enabled by source engineering is a promising candidate to achieve unique sub-60 mV/dec steep-slope switching. For the first time, we present an industry-standard multiscale TCAD framework for CSFET with pro
Publikováno v:
Computational Materials Science. 137:153-161
Composites are complex and inhomogeneous. Various factors of microstructure will affect their mechanical behaviors. Based on a systematic numerical analysis, we present a coupling effect of the volume fraction of reinforced particles and the particle