Zobrazeno 1 - 10 of 14 pro vyhledávání: '"Raphael Edem Agbenyeke"'
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Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability
Autor: Heenang Choi, Bo Keun Park, Gun Hwan Kim, Taek-Mo Chung, Raphael Edem Agbenyeke, Wooseok Song, Doo Seok Jeong, Jin Joo Ryu, Seung-Jong Yoo, Taeyong Eom, Kanghyeok Jeon
Publikováno v: Applied Surface Science. 577:151936
2-dimensional materials are highlighted in various electronic device applications due to their tunable and unique anisotropic physical characteristics induced by inherent low-dimensional nature. Herein, a 2-dimensional layered structure of SnS2 is ra
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6d63b189646b16de9afd3aad3124906
https://doi.org/10.1016/j.apsusc.2021.151936
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5
Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition
Autor: Young Lee, Chang Gyoun Kim, Raphael Edem Agbenyeke, Taek-Mo Chung, Bo Keun Park, Seong Ho Han, Ga Yeon Lee, Seung Uk Son
Publikováno v: Dalton transactions (Cambridge, England : 2003). 49(14)
A novel series of zinc complexes, [EtZn(dab)]2 (1), [EtZn(damb)]2 (2), [EtZn(damp)]2 (3), and [EtZn(dadb)]2 (4), were prepared via single-step substitution. Further, these were analyzed by nuclear magnetic resonance (NMR), Fourier transform infrared
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bb726fed01735d31afc273f3f12ec3
https://pubmed.ncbi.nlm.nih.gov/32159539
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6
Growth of Cu2S thin films by atomic layer deposition using Cu(dmamb)2 and H2S
Autor: Raphael Edem Agbenyeke, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Bo Keun Park
Publikováno v: Applied Surface Science. 456:501-506
In this study, atomic layer deposition (ALD) of Cu2S was explored using bis(dimethylamino-2-methyl-2-butoxy)copper(II) and 5% H2S combination as Cu and S sources, respectively. The reaction resulted in a high growth rate of ∼0.22–0.24 nm/cycle at
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdda2d4b32ced3c7b1be064926c7c7c5
https://doi.org/10.1016/j.apsusc.2018.05.017
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8
Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O
Autor: Eun Ae Jung, Taek-Mo Chung, Jeong Hwan Han, Chang Gyoun Kim, Bo Keun Park, Raphael Edem Agbenyeke
Publikováno v: Applied Surface Science. 419:758-763
Indium oxide (In 2 O 3 ) thin films were deposited by atomic layer deposition using dimethyl( N -ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me 2 In(EDPA)) and H 2 O as the In-precursor and reactant, respectively. The In 2 O 3 films exhibited a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a8ecd584cb423d65477a6f58d667d01
https://doi.org/10.1016/j.apsusc.2017.05.066
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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
Autor: Eun Ae Jung, Hyo Yeon Kim, Taek-Mo Chung, Raphael Edem Agbenyeke, Jeong Hwan Han, Bo Keun Park, Jin-Seong Park, Dong Ju Jeon, Sang-Hee Ko Park, Geumbi Mun, Seung Uk Son
Publikováno v: ACS Applied Materials & Interfaces. 8:26924-26931
Low-temperature growth of In2O3 films was demonstrated at 70–250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00f82377a34e4fc911f3a33b5b093ace
https://doi.org/10.1021/acsami.6b07332
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