Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Raphael Butté"'
Autor:
Maryna Hrytsaienko, Mathieu Gallart, Mark Ziegler, Olivier Crégut, Pierre Gilliot, Sebastian Tamariz, Raphael Butté, Nicolas Grandjean, Bernd H. Hönerlage
Publikováno v:
Advances in Ultrafast Condensed Phase Physics III.
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-15 (2022)
Single-photon emission from a single GaN/AlN quantum dot induced by continuous-wave laser excitation, leading to an optimum g (2)(0) = 0.17 at room temperature.
Externí odkaz:
https://doaj.org/article/1d8ed9cb12d248c28168e7c8def95f93
Autor:
Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi, Paul M. Walker, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Dmitry V. Skryabin, Jean-François Carlin, Nicolas Grandjean, Raphaël Butté
Publikováno v:
APL Photonics, Vol 8, Iss 2, Pp 021302-021302-7 (2023)
Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring r
Externí odkaz:
https://doaj.org/article/25544818016b4766822f94ddfc9104e6
Autor:
Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Publikováno v:
Nanomaterials, Vol 13, Iss 18, p 2569 (2023)
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (9 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of
Externí odkaz:
https://doaj.org/article/5580c7b8366f4676b8e2af8cdaf7fc0b
Autor:
Stefan T. Jagsch, Noelia Vico Triviño, Frederik Lohof, Gordon Callsen, Stefan Kalinowski, Ian M. Rousseau, Roy Barzel, Jean-François Carlin, Frank Jahnke, Raphaël Butté, Christopher Gies, Axel Hoffmann, Nicolas Grandjean, Stephan Reitzenstein
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Here the authors present temperature dependent studies of GaN nanobeam lasers grown on a silicon substrate and demonstrate high-βlasing at room temperature. Comprehensive optical and quantum-optical characterization, complemented by microscopic mode
Externí odkaz:
https://doaj.org/article/ad6ef42c87e64954840d973bd81724fb