Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Raphael Böckle"'
Autor:
Raphael Böckle, Masiar Sistani, Martina Bažíková, Lukas Wind, Zahra Sadre‐Momtaz, Martien I. den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field‐
Externí odkaz:
https://doaj.org/article/e3760d4850944539be29483ab06928ad
Autor:
Lukas Wind, Raphael Böckle, Masiar Sistani, Peter Schweizer, Xavier Maeder, Johann Michler, Corban G.E. Murphey, James Cahoon, Walter M. Weber
Publikováno v:
ACS Applied Materials & Interfaces. 14:26238-26244
Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the form
Publikováno v:
ACS Photonics. 8:3469-3475
Recent advances in nanoscale optoelectronic Ge devices have exposed their enormous potential for highly sensitive visible and near-infrared CMOS compatible photodetectors. In this respect, Ge nanow...
Autor:
Raphael Böckle, Masiar Sistani, Walter M. Weber, Minh Anh Luong, Alois Lugstein, Martien Den Hertog, David Falkensteiner
Publikováno v:
ACS Nano
ACS Nano, 2021, 15 (11), pp.18135-18141. ⟨10.1021/acsnano.1c06801⟩
ACS Nano, 2021, 15 (11), pp.18135-18141. ⟨10.1021/acsnano.1c06801⟩
The functional diversification and adaptability of the elementary switching units of computational circuits are disruptive approaches for advancing electronics beyond the static capabilities of conventional complementary metal-oxide-semiconductor-bas
Autor:
Raphael Böckle, Masiar Sistani, Martina Bažíková, Lukas Wind, Zahra Sadre‐Momtaz, Martien I. den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber
Publikováno v:
Advanced Electronic Materials. 9
Autor:
Lukas, Wind, Masiar, Sistani, Raphael, Böckle, Jürgen, Smoliner, Lada, Vukŭsić, Johannes, Aberl, Moritz, Brehm, Peter, Schweizer, Xavier, Maeder, Johann, Michler, Frank, Fournel, Jean-Michel, Hartmann, Walter M, Weber
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(44)
Si
Autor:
Alois Lugstein, Minh Anh Luong, Walter M. Weber, Maximilian G. Bartmann, Kilian Eysin, Raphael Böckle, Martien Den Hertog, Masiar Sistani
Publikováno v:
Advanced Electronic Materials
Advanced Electronic Materials, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, Wiley, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, Wiley, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::934e1622dbc04f7de20620cefce28d2c
https://hal.science/hal-03429125
https://hal.science/hal-03429125
Autor:
Masiar Sistani, Michael S. Seifner, Alois Lugstein, Raphael Böckle, Sven Barth, Philipp Staudinger
Publikováno v:
Nanotechnology. 31(44)
Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today’s complementary-
Autor:
Alois Lugstein, Bernd Rellinghaus, Darius Pohl, Walter M. Weber, Masiar Sistani, Boris Lipovec, Raphael Böckle
Publikováno v:
Advanced Materials Technologies. 7:2100647
Autor:
Johann Michler, Raphael Böckle, Lukas Wind, Alois Lugstein, Masiar Sistani, Xavier Maeder, Walter M. Weber, Peter Schweizer, Kilian Eysin
Publikováno v:
Advanced Electronic Materials. 7:2100101