Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Ranjit V. Kashid"'
Autor:
Ranjit V. Kashid, Pracheetee D. Joag, M. Thripuranthaka, Chandra S. Rout, Dattatray J. Late, Mahendra A. More
Publikováno v:
Nanomaterials and Nanotechnology, Vol 5, Iss , p 10 (2015)
Field emission and current noise of hydrothermally synthesized MoS2 nanosheets are investigated in ultra- high-vacuum and industrially suited high-vacuum conditions. The study reveals that the emission turn-on field is pressure dependent. Moreover, t
Externí odkaz:
https://doaj.org/article/ed15733811264919bddfecf8bc33fb5b
Autor:
C. Prabukumar, K. R. Adithya, Anil Sutar, Khushal Sirsat, Punam Kulkarni, Janardhan Rao Gadde, Vijaya Giramkar, Sriman Tadka, Ranjit Hawaldar, Ranjit V. Kashid, Shany Joseph
Publikováno v:
Green Energy and Technology ISBN: 9789819922789
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be778b60743d23a65e9fb0d7ed4400d1
https://doi.org/10.1007/978-981-99-2279-6_40
https://doi.org/10.1007/978-981-99-2279-6_40
Publikováno v:
Novel Patterning Technologies 2021.
NIST is using atomically precise fabrication to develop electronic devices for use in quantum information processing and novel quantum materials. We are using hydrogen-based scanning probe lithography to enable deterministic placement of individual d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f5d992f98fc07773fa80f5818b04c1
https://doi.org/10.1117/12.2586982
https://doi.org/10.1117/12.2586982
Autor:
Michael Stewart, Xiqiao Wang, Richard M. Silver, Scott W. Schmucker, Ranjit V. Kashid, Joseph A. Hagmann, Jonathan Wyrick, Pradeep Namboodiri, Curt A. Richter
Publikováno v:
Physical Review B. 101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b13e52d96eaa952b4057225b418edb
https://doi.org/10.1103/physrevb.101.245419
https://doi.org/10.1103/physrevb.101.245419
Autor:
Michael Stewart, Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Andrew Murphy
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-9 (2020)
Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bd9c792850840a0c6f6bfbc02a0c6ad
https://doi.org/10.1038/s42005-020-0343-1
https://doi.org/10.1038/s42005-020-0343-1
Autor:
Ranjit V. Kashid, Richard M. Silver, Scott W. Schmucker, Pradeep Namboodiri, Jonathan Wyrick, Xiqiao Wang
Publikováno v:
Nano Letters. 18:7502-7508
Hydrogen atoms on a silicon surface, H–Si (100), behave as a resist that can be patterned with perfect atomic precision using a scanning tunneling microscope. When a hydrogen atom is removed in this manner, the underlying silicon presents a chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b85347a413c7040512aed183a19cca92
https://doi.org/10.1021/acs.nanolett.8b02919
https://doi.org/10.1021/acs.nanolett.8b02919
Autor:
Jonathan Wyrick, Richard M. Silver, Pradeep Namboodiri, Joshua Schumacher, Michael Stewart, Alline F. Myers, Ranjit V. Kashid, Binhui Hu, Scott W. Schmucker, Xiqiao Wang
Publikováno v:
Physical review applied. 11
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::706a99bfcbce1fdc799a614e918135a8
https://pubmed.ncbi.nlm.nih.gov/31579257
https://pubmed.ncbi.nlm.nih.gov/31579257
Autor:
Avradip Pradhan, Preeti Deshpande, Arindam Ghosh, Tanweer Ahmed, Saloni Kakkar, Ambarish Ghosh, Jayanta Kumar Mishra, Kallol Roy, Pranav Mundada, Ranjit V. Kashid
Publikováno v:
APL Materials, Vol 8, Iss 9, Pp 091114-091114-7 (2020)
The transfer of charge carriers across the optically excited hetero-interface of graphene and semiconducting transition metal dichalcogenides (TMDCs) is the key to convert light to electricity, although the intermediate steps from the creation of exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbd28fefa192471bc306a3c6ada91968
https://doi.org/10.1063/5.0020396
https://doi.org/10.1063/5.0020396
Autor:
Harshit Dubey, T. Phanindra Sai, Kimberly Hsieh, Tanweer Ahmed, Kallol Roy, Saquib Shamim, Ranjit V. Kashid, Arindam Ghosh, Shruti Maliakal
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 30(2)
Van der Waals hybrids of graphene and transition metal dichalcogenides exhibit an extremely large response to optical excitation, yet counting of photons with single-photon resolution is not achieved. Here, a dual-gated bilayer graphene (BLG) and mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8434ed170b5876b3c4ed489b29638fc
https://pubmed.ncbi.nlm.nih.gov/29164707
https://pubmed.ncbi.nlm.nih.gov/29164707