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pro vyhledávání: '"Ranish M. Ramachandran"'
Autor:
Hongyan Xu, Feng Han, Chengkai Xia, Siyan Wang, Ranish M. Ramachandran, Christophe Detavernier, Minsong Wei, Liwei Lin, Serge Zhuiykov
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
Abstract Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post
Externí odkaz:
https://doaj.org/article/212df1642a534eb591465ae3a6bd1052
