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pro vyhledávání: '"Rangra, K. J."'
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been characterized using X
Externí odkaz:
http://arxiv.org/abs/1509.01064
Publikováno v:
Microsystem Technologies; Feb2019, Vol. 25 Issue 2, p729-734, 6p
Autor:
Pandey, Shilpi, Bansal, Deepak, Panwar, Deepak, Shukla, Neha, Kumar, Arvind, Kothari, Prateek, Verma, Seema, Rangra, K. J.
Publikováno v:
AIP Conference Proceedings; 2016, Vol. 1724 Issue 1, p1-4, 4p, 4 Diagrams
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AIP Conference Proceedings; 2016, Vol. 1724 Issue 1, p1-5, 5p, 5 Graphs
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AIP Conference Proceedings; 2016, Vol. 1724 Issue 1, p1-5, 5p, 4 Diagrams, 2 Graphs
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AIP Conference Proceedings; 2016, Vol. 1724 Issue 1, p1-6, 6p, 3 Diagrams, 2 Charts
Publikováno v:
Defence Science Journal; Sep2015, Vol. 65 Issue 5, p403-410, 8p
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2012 International Conference on Computing, Electronics & Electrical Technologies (ICCEET); 1/ 1/2012, p354-357, 4p
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International Journal of Recent Trends in Engineering; Nov2009, Vol. 2 Issue 7, p95-98, 4p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 2, p873-876, 4p