Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Rangarajan, Muralidharan"'
Autor:
Solanke, Swanand V., Soman, Rohith, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N.
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinc
Externí odkaz:
http://arxiv.org/abs/2008.13770
Autor:
Solanke, Swanand, Rathakanthiwar, Shashwat, Kalra, 1Anisha, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N.
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of thickness ~ 200 n
Externí odkaz:
http://arxiv.org/abs/1803.11012
Autor:
Chandrasekar, Hareesh, Bhat, K N, Rangarajan, Muralidharan, Raghavan, Srinivasan, Bhat, Navakanta
Publikováno v:
Scientific Reports 7, Article number: 15749 (2017)
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of
Externí odkaz:
http://arxiv.org/abs/1711.03324
Autor:
Solanke, Swanand V., Soman, Rohith, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N.
Publikováno v:
In Sensors and Actuators: A. Physical 1 January 2021 317
Autor:
Rijo Baby, K. Reshma, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Publikováno v:
IEEE Transactions on Electron Devices. 70:1607-1612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1208f7fdabd4f0e344c60c995ab1ea5
https://doi.org/10.1109/ted.2023.3241132
https://doi.org/10.1109/ted.2023.3241132
Autor:
Remesh, Nayana, Chandrasekar, Hareesh, Venugopalrao, Anirudh, Raghavan, Srinivasan, Rangarajan, Muralidharan, Nath, Digbijoy N.
Publikováno v:
Journal of Applied Physics; 8/21/2021, Vol. 130 Issue 7, p1-10, 10p
Autor:
Sandeep Vura, Usman Ul Muazzam, Vishnu Kumar, Sai Charan Vanjari, Rangarajan Muralidharan, Nath Digbijoy, Pavan Nukala, Srinivasan Raghavan
Publikováno v:
ACS Applied Electronic Materials. 4:1619-1625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3a99266a9ccaf90b92ca85394e6800
https://doi.org/10.1021/acsaelm.1c01296
https://doi.org/10.1021/acsaelm.1c01296
Autor:
Aniruddhan Gowrisankar, Sai Charan Vanjari, Abheek Bardhan, Anirudh Venugopalarao, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe9bec5c3a3179a9a4740b9cb42cdb6
https://doi.org/10.1109/icee56203.2022.10118188
https://doi.org/10.1109/icee56203.2022.10118188
Autor:
Digbijoy N. Nath, Vanjari Sai Charan, Rangarajan Muralidharan, Sandeep Vura, Srinivasan Raghavan
Publikováno v:
IEEE Electron Device Letters. 42:497-500
We report a novel Sc/Al/Ni/Au metal scheme for Ohmic contacts to InAlN/GaN HEMT structures on silicon. A contact resistance of $0.39~\Omega $ -mm with a low surface roughness of 20± 3 nm of the annealed contact has been achieved using this metal sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe28df054a71cc473e7899a81eb9c57
https://doi.org/10.1109/led.2021.3056757
https://doi.org/10.1109/led.2021.3056757
Publikováno v:
RSC Advances. 11:36901-36912
Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations. In this work, we use multilayer α-In2Se3 to realize a ferroelectric channel semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877781e556f556c068b68df96fc74966
https://doi.org/10.1039/d1ra07728g
https://doi.org/10.1039/d1ra07728g