Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ranee Wai-Ling Kwong"'
Autor:
Ranee Wai-Ling Kwong, Sen Liu, W. Li. Khojasteh, P. R. Varanasi, Rex Chen, Irene Popova, Margaret C. Lawson
Publikováno v:
Journal of Photopolymer Science and Technology. 20:481-491
The combination of immersion lithography and reticle enhancement techniques (RETs) has extended 193nm lithography into the 45nm node and possibly beyond. In order to fulfill the tight pitch and small critical dimension requirements of these future te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa58018c3949dd96f32a669f3bd26fdf
https://doi.org/10.2494/photopolymer.20.481
https://doi.org/10.2494/photopolymer.20.481
Autor:
Mahmoud Khojasteh, Margaret C. Lawson, Gary Dabbagh, Linda K. Sundberg, Y. Nishiyama, Kuang-Jung J. Chen, Tsutomu Shimokawa, M. Siezak, Takashi Chiba, P. J. Brock, Ranee Wai-Ling Kwong, R. Sooriyakumaran, Wai-kin Li, P. R. Varanasi, Robert D. Allen, Kaushal Patel, Z. Liu
Publikováno v:
Journal of Photopolymer Science and Technology. 18:381-387
We have designed and developed a variety of hexafluoroalcohol (HFA) pendant methacrylate monomers and the corresponding imaging polymers for ArF lithography. It was found that HFA side chains are critical for "swelling free" dissolution properties fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc926f2dd071180a830aa55c0c13920
https://doi.org/10.2494/photopolymer.18.381
https://doi.org/10.2494/photopolymer.18.381
Autor:
Wu-Song Huang, Karen Petrillo, Arpan P. Mahorowala, Ranee Wai-Ling Kwong, Marie Angelopoulos, Wayne M. Moreau, C. R. Guarnieri, Arieh Aviram, David R. Medeiros, Christopher Magg
Publikováno v:
IBM Journal of Research and Development. 45:639-650
Resists for advanced mask-making with high-voltage electron-beam writing tools have undergone dramatic changes over the last three decades. From PMMA and the other early chain-scission resists for micron dimensions to the aqueous-base-developable, dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7051ee3c63640bf4829c87564e5044bd
https://doi.org/10.1147/rd.455.0639
https://doi.org/10.1147/rd.455.0639
Autor:
Krishna Gandi Sachdev, Harbans S. Sachdev, Ahmad D. Katnani, Ranee Wai-Ling Kwong, Wu-Song Huang
Publikováno v:
Microelectronic Engineering. 27:393-396
A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40db93a3f18498977326bf2894aa402
https://doi.org/10.1016/0167-9317(94)00131-d
https://doi.org/10.1016/0167-9317(94)00131-d
Autor:
Ranee Wai-Ling Kwong, Wayne M. Moreau, Warren Montgomery, William R. Brunsvold, Kevin M. Welsh, Harbans S. Sachdev, R. Kvitek, Willard E. Conley
Publikováno v:
Microelectronic Engineering. 13:19-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315dcc1fdc8e82c7237d131edf444da3
https://doi.org/10.1016/0167-9317(91)90039-g
https://doi.org/10.1016/0167-9317(91)90039-g