Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Randy J. Koval"'
Autor:
Ben Kaczer, Andreas Kerber, Christian Monzio Compagnoni, Randy J. Koval, Kevin J. Chen, S. Ramey, Lucio Pancheri, Souvik Mahapatra, Gaudenzio Meneghesso, Chandra Mouli, Hei Wong, J. H. Stathis, Runsheng Wang, Elyse Rosenbaum, David C. Sheridan
Reliability is an important consideration during semiconductor technology development, which ensures that the performances of devices, circuits, and systems are maintained over a specified period of time, leading to successful products. Device reliab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d5017387a5af647559da6b7524c71be
http://hdl.handle.net/11577/3414974
http://hdl.handle.net/11577/3414974
Autor:
Niccolo Righetti, Chandru Venkatasubramanian, Yifen Liu, Mebrahtu Henok T, Huang Guangyu, Haitao Liu, Xiangyu Yang, Salil Mujumdar, Akira Goda, Hiroyuki Sanda, Andrew Bicksler, Yu Yuwen, Srivardhan Gowda, Elisa Camozzi, Kevin L. Beaman, Tecla Ghilardi, Christian Caillat, Matt Ulrich, Randy J. Koval, Duo Mao
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
The Gate-Induce-Drain-Leakage (GIDL)-assisted body biasing for erase, which is a technique essential to enabling 3DNAND Flash CMOS Under Array architectures, has been extensively studied and successfully optimized to achieve high-performance, reliabl
Autor:
Christian Monzio Compagnoni, Giovanni M. Paolucci, Alessandro S. Spinelli, Jeffrey Alan Kessenich, A.L. Lacaita, Carmine Miccoli, Akira Goda, Randy J. Koval, John Barber
We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper choice of experimental conditions eliminates the impact of averaging effects and disturbs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cf6ccb3534c63af52e78b687c42e280
http://hdl.handle.net/11311/719751
http://hdl.handle.net/11311/719751