Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Random telegraph noise (RTN)"'
Autor:
Eunseok Oh, Hyungcheol Shin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 934-940 (2024)
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift
Externí odkaz:
https://doaj.org/article/602e638e32ee4f60862509ba64b886d9
Autor:
Calvin Yi-Ping Chao, Thomas Meng-Hsiu Wu, Shang-Fu Yeh, Chih-Lin Lee, Honyih Tu, Joey Chiao-Yi Huang, Chin-Hao Chang
Publikováno v:
Sensors, Vol 23, Iss 18, p 7959 (2023)
In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the signifi
Externí odkaz:
https://doaj.org/article/c06690f3ebe8457bbca1d30d25a46465
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 459-465 (2022)
In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise. We derived analytical formulations for modeling the impact o
Externí odkaz:
https://doaj.org/article/9a5f98abc5b74578b554557d070039d5
Akademický článek
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Akademický článek
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Autor:
Mehzabeen Mehedi, Kean Hong Tok, Zengliang Ye, Jian Fu Zhang, Zhigang Ji, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 9, Pp 43551-43561 (2021)
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes circuits vulnerable to nois
Externí odkaz:
https://doaj.org/article/75d8976cbe2746f5ad572d4df86ade03
Autor:
Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 972-984 (2021)
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ch
Externí odkaz:
https://doaj.org/article/16be69d937ef4c6a980e1bb88730f4e9
Autor:
Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 8, Pp 182273-182282 (2020)
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit a
Externí odkaz:
https://doaj.org/article/df7db409461345a9bd6c47ddf91a368f
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4344 (2022)
In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transi
Externí odkaz:
https://doaj.org/article/8ae7ec6d4d4148d498cd608511525926
Autor:
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 227-238 (2019)
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated. It is found that before X-ray irradiation the dominant type
Externí odkaz:
https://doaj.org/article/772571bf7ee14c78833b91cda975e837