Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Random access storage"'
Publikováno v:
Electronics Letters, Vol 60, Iss 15, Pp n/a-n/a (2024)
Abstract Turbo product codes (TPCs) have been widely used for bit error correction in high‐speed applications such as data storage. This letter introduces an efficient hard‐input hard‐output iterating TPC decoder module. A transpose memory util
Externí odkaz:
https://doaj.org/article/91920095831d4978b732d11b8f2c3156
Akademický článek
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Autor:
Mountassar Maamoun, Adnane Hassani, Samir Dahmani, Hocine Ait Saadi, Ghania Zerari, Noureddine Chabini, Rachid Beguenane
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 5, Pp 475-484 (2021)
Abstract This paper proposes an efficient high‐order finite impulse response (FIR) filter structure for field programmable gate array (FPGA)‐based applications with simultaneous digital signal processing (DSP) and look‐up‐table (LUT) reduced
Externí odkaz:
https://doaj.org/article/96244c7e0826458aa29054659b76369f
Autor:
Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S.
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A79686
https://tud.qucosa.de/api/qucosa%3A79686/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A79686/attachment/ATT-0/
Autor:
Ramalingaswamy Cheruku, Damodar Reddy Edla, Venkatanareshbabu Kuppili, Ramesh Dharavath, Nareshkumar Reddy Beechu
Publikováno v:
Healthcare Technology Letters (2017)
Low-power wearable devices for disease diagnosis are used at anytime and anywhere. These are non-invasive and pain-free for the better quality of life. However, these devices are resource constrained in terms of memory and processing capability. Memo
Externí odkaz:
https://doaj.org/article/1640801e1217426bafa711cb53d7a70f
Autor:
Yoo-Seung Won, Shivam Bhasin
Publikováno v:
FDTC
Cold boot attacks are semi-invasive attacks which have threatened computer systems over a decade now to leak sensitive user information passwords, keys and PIN. With internet of things (IoT) finding mass deployment, their security must be well invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fb8cd81531f08438d9cbbfb7ae8c31a
https://hdl.handle.net/10356/156099
https://hdl.handle.net/10356/156099
Autor:
Giovanni Finocchio, Stefano Chiappini, Zhongming Zeng, Giulio Siracusano, Vito Puliafito, Felice Crupi, R. De Rose, Mario Carpentieri, Teruo Ono, Marco Lanuzza, Takahiro Moriyama
This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and with microma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36cccc761a2082fcfdb724c5fa82055e
http://hdl.handle.net/11589/206480
http://hdl.handle.net/11589/206480
Autor:
Furqan Mehmood, Patrick D. Lomenzo, Thomas Mikolajick, Evelyn T. Breyer, Halid Mulaosmanovic, Michael J. Hoffmann, Terence Mittmann, Benjamin Max, Uwe Schroeder, Stefan Slesazeck
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43cbc880a69b5486d8743ff0fef5300e
https://tud.qucosa.de/id/qucosa:79686
https://tud.qucosa.de/id/qucosa:79686
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
IOLTS
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
IOLTS
With the advent of the slowdown in DRAM capacitor scaling [1] and the increased reliability problems of traditional 6T SRAM memories [2], industry and academia have looked for alternative memory cells. Among those, gain- cells have attracted signific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc680ec8a3ac3261a2830d667631408
http://hdl.handle.net/2117/125975
http://hdl.handle.net/2117/125975
Autor:
A. La Corte, Giovanni Finocchio, Anna Giordano, Pietro Burrascano, Mario Carpentieri, Vito Puliafito, Bruno Azzerboni, Riccardo Tomasello, Giulio Siracusano
Publikováno v:
IEEE Transactions on Magnetics. 53:1-5
The technological implementation of STT-magnetic random-access memory (MRAM) in real devices needs a complete description of the statistical switching behavior at room temperature. In this paper, we investigate, by means of a full micromagnetic model