Zobrazeno 1 - 10
of 1 069
pro vyhledávání: '"Random Telegraph Noise"'
Autor:
Eunseok Oh, Hyungcheol Shin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 934-940 (2024)
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift
Externí odkaz:
https://doaj.org/article/602e638e32ee4f60862509ba64b886d9
Autor:
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 658-661 (2024)
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of t
Externí odkaz:
https://doaj.org/article/09c859b81e254e71b8dbdeb8f936cf18
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100205- (2023)
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations
Externí odkaz:
https://doaj.org/article/8db8e89e50874e69ae723457f117390b
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 5, Pp n/a-n/a (2023)
Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons
Externí odkaz:
https://doaj.org/article/f4829714d0284817be35b02fca0cc54c
Autor:
Calvin Yi-Ping Chao, Thomas Meng-Hsiu Wu, Shang-Fu Yeh, Chih-Lin Lee, Honyih Tu, Joey Chiao-Yi Huang, Chin-Hao Chang
Publikováno v:
Sensors, Vol 23, Iss 18, p 7959 (2023)
In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the signifi
Externí odkaz:
https://doaj.org/article/c06690f3ebe8457bbca1d30d25a46465
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 611-619 (2022)
This work presents a new method for the Verilog-A implementation of Lorentzian noise models, in a module called VERILOR, which can automatically generate either Lorentzian or 1/f-like noise spectra depending on the trap density and gate oxide area, f
Externí odkaz:
https://doaj.org/article/b17819f744494194984feb209413215b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 459-465 (2022)
In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise. We derived analytical formulations for modeling the impact o
Externí odkaz:
https://doaj.org/article/9a5f98abc5b74578b554557d070039d5
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.